Method for extracting height of Schottky barrier through photovoltaic value measurement

Abstract

The invention relates to a method for extracting the height of a Schottky barrier through photovoltaic value measurement. In the method, the height of the Schottky barrier is extracted by measuring the photovoltaic value of a pn junction photovoltaic photodiode. The method specifically comprises the following steps that firstly, under the open-circuit condition, a background light source shines on the pn junction photovoltaic photodiode, the steady-state photovoltaic value of the photodiode is measured, and the illumination intensity of the background light source is increased continuously until the steady-state photovoltaic value of the photodiode is not increased any more; secondly, when the steady-state photovoltaic value of the photodiode is not increased any more, ultrafast pulse lasers shine on the photodiode, the illumination intensity of incidence lasers is increased continuously to saturate the measured transient-state photovoltaic value of the photodiode, and the minimal value V1 of the transient-state photovoltaic value is acquired; thirdly, calculation is carried out through formulas to acquire the electrode interface Schottky barrier height of the pn junction photovoltaic photodiode. Compared with the prior art, the method has the advantages of being capable of effectively reducing interference, simple, convenient to use, high in sensitivity, free of damaging devices, strong in practicability and the like.

Description

technical field [0001] The invention relates to the field of semiconductor science and technology, in particular to a method for extracting the Schottky barrier height through photovoltaic measurement. Background technique [0002] The characteristic of ohmic contact and Schottky contact characteristic of metal-semiconductor contact interface is the core of semiconductor devices and large-scale integrated circuits. Ohmic contacts can be used for the input and output of semiconductor device signals and the interconnection between various components, while the Schottky contact characteristics determine the parameters of device performance and are the basis for semiconductor device design. For a typical pn junction photovoltaic photodiode, except for the pn junction characteristics of the device itself, the rest of the characteristics are device parasitic effects (including metal / semiconductor contact and its resistance effect). Among the components of parasitic effects, metal...

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Problems solved by technology

However, in the traditional current-voltage test (I-V) and capacitance-voltage test (C-V), the interface information can only be obtained when the Schottky contact effect of the metal / semiconductor interface is more significant. Therefore, the interface Schottky can be extracted by testing I-V and C-V characteristics The method of base barrier height often fails, which requires research and establishment of a reliable new method for characterization of Schottky barrier height at the metal / semiconductor interface of pn junction photovoltaic photodiodes

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