A write operation method and device for a phase change memory
A phase-change memory, phase-change storage technology, applied in the computer field, can solve the problems of long time spent, reduced write operation efficiency, long delay time, etc.
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Embodiment 1
[0072] An embodiment of the present invention provides a write operation method for a phase change memory, see figure 1 , the method includes:
[0073] Step 101: When the phase-change memory performs a write operation, generate a corresponding voltage pulse signal according to the data to be written, and apply the voltage pulse signal to the phase-change material included in the phase-change memory cell corresponding to the data to be written and On the voltage dividing resistor connected in series with the phase change material;
[0074] Step 102: Comparing the voltage across the sampling resistor with the threshold voltage to generate an indication value corresponding to the data stored in the phase-change memory unit, the sampling resistor is a voltage dividing resistor or a phase-change material;
[0075] Step 103: According to the indication value, it is judged whether the data stored in the phase-change memory cell corresponding to the indication value is the same as th...
Embodiment 2
[0100] An embodiment of the present invention provides a write operation method for a phase change memory. Among them, see figure 2 The circuit block diagram of the phase change memory shown, the phase change memory includes control logic, row decoder, column decoder, storage array, read and write circuit, input latch and output buffer. The row address is input to the row decoder, and the column address is input to the column decoder. The row decoder decodes the row address and inputs the decoded signal to the memory array to select a certain row in the memory array. The column decoder decodes the column address and inputs the decoded signal to the memory array, so as to select a certain column in the memory array.
[0101] The memory array includes a plurality of phase-change memory cells, and the multiple phase-change memory cells are formed by crossing word lines and bit lines. Such as image 3 As shown, the word line is used to select a plurality of phase-change memory...
Embodiment 3
[0142] An embodiment of the present invention provides a write operation method for a phase change memory. Among them, such as Figure 5 As shown, the word line is used to select a plurality of phase-change memory cells in one row of the memory array, and the bit line is connected to the read-write circuit, and the voltage pulse signal generated by the read-write circuit can be transmitted through the bit line. The comparator, the control circuit and the voltage dividing resistor R1 are shared by all the phase-change memory cells on the same bit line. Since the resistance of a phase change material changes between a high resistance state and a low resistance state with its state, the phase change material is usually regarded as a variable resistor, such as Figure 5 There is a variable resistor on each phase-change memory cell in the device, and the variable resistor is the phase-change material of the phase-change memory cell. and in Figure 5 Among them, the output end of...
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