A method for forming a double epitaxial layer of a semiconductor device

Abstract

The invention relates to a method for forming double epitaxial layers of a semiconductor device. The method comprises: providing a semiconductor substrate which at least includes a first gate and a second gate; forming an epitaxial barrier layer on the semiconductor substrate; removing the first gate and the epitaxial barrier layer on a source-drain area at the two sides through etching to expose the semiconductor substrate, and growing a first semiconductor material layer in an epitaxial manner in the source-drain area at the two sides of the first gate to form a first uplift source-drain; removing the residual epitaxial barrier layer through etching and forming a second uplift source-drain in the source-drain area at the two sides of the second gate, wherein a second semiconductor material layer has a higher etching selectivity ratio than the first semiconductor material layer; decomposing a mask material layer on the second gate and the second uplift source-drain; removing the second semiconductor material layer on the first uplift source-drain through etching; and removing the mask material layer. The method provided by the invention is simpler and more efficient.

Description

technical field [0001] The invention relates to the field of semiconductors, and in particular, the invention relates to a method for forming a double epitaxial layer of a semiconductor device. Background technique [0002] When preparing semiconductor devices, it is often necessary to epitaxially grow two different semiconductor materials in different regions of the semiconductor substrate. For example, it is often necessary to epitaxially grow two different semiconductor materials on the source and drain of NMOS and PMOS. Currently, the source and drain of NMOS and PMOS When two different semiconductor materials are epitaxially grown, it is often necessary to form an epitaxial barrier layer twice. The specific method is: provide a semiconductor substrate with source and drain regions and gates of NMOS and PMOS on the substrate. To form a semiconductor material on the NMOS and PMOS sources and drains, it is necessary to deposit and form an epitaxial barrier layer on the sou...

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Problems solved by technology

[0003] At present, the process steps of epitaxially growing two different semiconductor materials in different regions of the semiconductor substrate are very cumbersome, adding many unnecessary steps, and the efficiency is low, so the current method needs to be improved

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