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A kind of preparation method of high quality and large size single crystal graphene

A single-crystal graphene, graphene technology, applied in the preparation of high-quality large-size single-crystal graphene, the field of preparing high-quality large-size single-crystal graphene, can solve the problem that graphene is prone to defects, affecting mobility and conductivity and other problems, to achieve the effect of low cost, large size and easy operation

Active Publication Date: 2016-08-17
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, graphene is prone to defects during nucleation and growth
These greatly affect the mobility and conductivity

Method used

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  • A kind of preparation method of high quality and large size single crystal graphene
  • A kind of preparation method of high quality and large size single crystal graphene
  • A kind of preparation method of high quality and large size single crystal graphene

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Such as figure 1 As shown, the present invention adopts a horizontal reaction furnace to grow graphene, and the two ends of the horizontal reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 4, and the metal substrate 2 (platinum in this embodiment) is placed in the high temperature zone of the horizontal reaction furnace. The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, the polycrystalline platinum sheet (thickness 180 μm, length×width=20mm×16mm) was ultrasonically cleaned in acetone, water and ethanol for 40 minutes respectively. After cleaning, the platinum sheet was placed in a high-temperature furnace and annealed at 1100° C. for 10 hours to make the single grain reach the millimeter level (the size of the single grain in this embodiment is specifically 1 mm to 5 mm). Then, place the annealed platinum sheet in the central area of ​​a horizontal r...

Embodiment 2

[0032] Such as figure 1 As shown, the present invention adopts a horizontal reaction furnace to grow graphene, and the two ends of the horizontal reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 4, and the metal substrate 2 (platinum in this embodiment) is placed in the high temperature zone of the horizontal reaction furnace. The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, the polycrystalline platinum sheet (thickness 180 μm, length×width=5cm×5cm) was ultrasonically cleaned in acetone, water and ethanol for 40 minutes respectively. After cleaning, the platinum sheet was placed in a high-temperature furnace and annealed at 1100° C. for 10 hours to make the single grain reach the millimeter level (the size of the single grain in this embodiment is specifically 1 mm to 5 mm). Then, place the annealed platinum sheet in the central area of ​​a horizontal rea...

Embodiment 3

[0035] Such as figure 1 As shown, the present invention adopts a horizontal reaction furnace to grow graphene, and the two ends of the horizontal reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 4, and the metal substrate 2 (copper in this embodiment) is placed in the high temperature zone of the horizontal reaction furnace. The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, a polycrystalline copper sheet (thickness 25 μm, length × width = 5 cm × 5 cm) was ultrasonically cleaned in acetone, water, and ethanol for 40 minutes. After cleaning, the copper sheet was placed in a high-temperature furnace and annealed at 1083° C. for 10 hours to make the individual grains reach the millimeter level (the size of the individual grains in this embodiment is specifically 1 mm to 5 mm). Then, the annealed copper sheet is placed in the central area of ​​a horizontal reac...

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Abstract

The invention relates to a new graphene material and its chemical vapor deposition (CVD) preparation technology, specifically a method for preparing high-quality large-size single-crystal graphene, which is suitable for preparing high-quality large-size single-crystal graphene. Using chemical vapor deposition technology, copper, platinum and other metals are used as the growth substrate, and hydrocarbons are used as the carbon source. In the presence of a carrier gas containing hydrogen, the metal substrate is first heat-treated, and the carbon source gas is used to catalyze at high temperature. Cracking and growing single crystal graphene. Then, the graphene is etched by adjusting the concentration of hydrogen and carbon sources, which greatly reduces the distribution density of single crystal graphene, and then adjusts the reaction atmosphere again to make it re-grow, and repeats this several times, and finally obtains high-quality large-size single crystal Graphene. The invention can obtain high-quality inch-level single-crystal graphene, which lays a foundation for its application in optoelectronic fields such as nanoelectronic devices, transparent conductive films, displays and solar cell electrodes, gas sensors, and thin-film electronic devices.

Description

Technical field: [0001] The invention relates to a new graphene material and its chemical vapor deposition (CVD) preparation technology, specifically a method for preparing high-quality large-size single-crystal graphene, which is suitable for preparing high-quality large-size single-crystal graphene. Background technique: [0002] Graphene is a single-layer carbon atom crystal tightly packed into a two-dimensional honeycomb crystal structure, and is the basic unit for constructing other dimensional carbon materials (such as zero-dimensional fullerene, one-dimensional carbon nanotubes, and three-dimensional graphite). This strictly two-dimensional atomic crystal material has excellent electrical, thermal and mechanical properties, such as: its electron mobility is as high as 200,000 cm at room temperature 2 / V·s, thermal conductivity up to 5000W·m -1 ·K -1 , Young's modulus up to 1TPa. The excellent performance of graphene makes it expected to be widely used in the fields...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/02C30B25/00
Inventor 任文才马腾成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI