Method for Monitoring Sensitivity of Electron Beam Defect Scanners

Abstract

The invention provides a method for monitoring the sensitivity of an electron beam defect scanning tool. According to the method, one or more defect testing modules are established on an on-line product wafer; after filling metal in through holes is planarized, the defect testing modules are used as a scanning region and an image capturing form is established; the defect testing modules are scanned by using the electron beam defect scanning tool, wherein scanning results are different due to that contact areas of the through holes in the defect testing modules and an active region are different; then the scanning results of the defect testing modules are compared with a pre-set standard SRAM (Static Random Access Memory) structure scanning result to judge the capability of detecting the defects by the electron beam defect scanning tool, so that the sensitivity of the electron beam defect scanning tool can be accurately and effectively monitored in an on-line manner; the reliability and the stability of on-line defect data are guaranteed so that the yield of the wafer is improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for monitoring the sensitivity of an electron beam defect scanner. Background technique [0002] With the development of integrated circuit technology and the scaling down of critical dimensions, as well as the increase in the complexity of semiconductor manufacturing, electron beam defect scanners (E-beam defect scan tools) are more and more widely used in semiconductor production processes, such as Insufficient etching defects of tungsten connection holes and copper connection holes of 55nm and below technology nodes, as well as dislocation leakage defects and nickel pipeline leakage defects, etc., all require the detection and monitoring of electron beam defect scanners, and this is not the case in the existing process is irreplaceable. In order to ensure the reliability and stability of electron beam defect scanner detection and long-term mo...

AI Technical Summary

Problems solved by technology

Since the monitoring results of electron beam defect scanners are basically analyzed with grayscale data, the difference in grayscale before and after scanning the standard wafer to be tested will cause certain deviations in the scanning results of successive electron beam defect scanners, which cannot Ensure the reliability and stability of electron beam defect scanner detection and long-term monitoring of defects, thus affecting the reliability and stability of online defect data

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