Unlock instant, AI-driven research and patent intelligence for your innovation.

mems microphone with improved sensitivity

A microphone and sensitivity technology, which is applied in the direction of semiconductor electrostatic transducers, loudspeakers, sensor types, etc., to achieve the effect of improving sensitivity

Active Publication Date: 2020-04-14
TDK CORPARATION
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, improvements in sensitivity still appear to be possible

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • mems microphone with improved sensitivity
  • mems microphone with improved sensitivity
  • mems microphone with improved sensitivity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] figure 1 An equivalent circuit diagram of a basic embodiment of a MEMS microphone MM is shown. The microphone MM comprises a MEMS capacitor MCAP which may be arranged in a MEMS device, eg a MEMS chip MEMS. The microphone further comprises a bias circuit BC and a charge circuit CC. The bias circuit BC provides a control signal for controlling the charging circuit CC. Charging circuit CC generates an operating voltage for MEMS capacitor MCAP and transfers a corresponding charge to the capacitor. A capacitor can include two or more electrodes. At least one of the electrodes is connected to a signal output SO, where an electrical signal encoding the received audio signal can be obtained for further processing.

[0045] The bias circuit BC comprises a closed loop control circuit CLCC creating a control signal for controlling the charging circuit. The control signal may be a voltage signal applied to the control circuit CC.

[0046] Within the closed-loop control circuit,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A MEMS microphone with an improved sensitivity, e.g., a reduced temperature dependence of the sensitivity. The microphone includes a MEMS capacitor, a charging circuit and a bias circuit. The bias circuit includes a closed loop control circuit and creates a bias voltage with a temperature dependence.

Description

technical field [0001] The invention relates to a MEMS microphone with improved sensitivity, for example to a MEMS microphone with a reduced temperature dependence of the sensitivity of the microphone. Background technique [0002] MEMS microphones include MEMS capacitors with variable capacitance, where changes in capacitance reflect received audio signals. Further, MEMS microphones include electrical and electronic circuits in an ASIC (Application Specific Integrated Circuit). To protect the MEMS capacitors and the circuitry in the ASIC in the ASIC chip from negative environmental influences, MEMS microphones include packaging components. The effect of MEMS capacitors, ASICs, and packaging components on the signal of a MEMS microphone suffers from temperature-induced changes in electrical characteristics. In particular, an increase in temperature degrades the microphone signal quality, and due to the complicated construction of the microphone, the individual contribution...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H04R19/04H04R19/00
CPCH04R19/005H04R19/04B81B7/0087B81B2201/0257B81B2207/012H04R3/00H04R2201/003
Inventor L.邹G.罗卡
Owner TDK CORPARATION
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More