Array substrate, manufacturing method thereof, and display device

Abstract

An array substrate and a manufacturing method therefor, a display device, and a thin-film transistor. The method comprises: forming on a base substrate (100) a pattern comprising an active layer (300), a pixel electrode (400), and a data line (200); forming a pattern comprising a gate insulation layer (500) and at least two gate electrode vias therein (510 and 520), where the at least two gate electrode vias (510 and 520) are located in an area in the gate insulation layer (500) corresponding to the periphery of the active layer (300) and not overlapped with areas where the pixel electrode (400) and the data line (200) are located; and, forming a pattern comprising a gate line (600) and at least two gate electrodes (610 and 620), where the at least two gate electrodes (610 and 620) are connected to the gate line (600) and are respectively located in the at least two gate electrode vias (510 and 520). The method reduces manufacturing processes and manufacturing costs.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] For the existing oxide thin film transistor (Oxide TFT), in order to improve the stability of the thin film transistor (TFT), the TFT adopts a dual gate (Dualgate, that is, two gate) structure. like figure 1 As shown, the TFT structure includes two gates, a top gate 1 at the top and a bottom gate 2 at the bottom. Between the top gate 1 and the bottom gate 2 is an active layer formed of a gate insulating layer and an oxide. Top gate 1 and bottom gate 2 turn on the TFT at the same time. Compared with a single gate, the double gate structure has the following advantages: the channel is formed on the upper and lower sides respectively, so that the Ion current increases, and the size of the TFT can be reduced correspondingly (which can improve the transmittance); at the s...

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Problems solved by technology

[0003] The manufacturing process of the TFT array substrate including this double-gate structure is more complicated than that of the array substrate of the single-gate structure TFT, and a gate layer needs to be added, so the manufacturing process needs to be increased accordingly.

make figure 1 The TFT array substrate requires 7 mask (mask) processes (7 masks from bottom to top are: bottom gate, active layer, top gate insulating layer vias, top gate and source-drain connection electrodes, insulating layer And its upper via hole, data line and source electrode, pixel electrode, figure 1 Only the top gate and the structure below it are shown in the figure), and the manufacturing cost of a mask process is high, which leads to the complicated manufacturing process and high cost of the existing array substrate including the double-gate structure TFT

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