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Semiconductor device and method of manufacturing semiconductor device

A semiconductor and device technology, applied in the field of chipping of semiconductor layers, can solve problems such as warping, and achieve the effects of preventing chattering, preventing chipping, and preventing clogging

Inactive Publication Date: 2017-06-16
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Otherwise, warpage may occur when Si and glass are bonded

Method used

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  • Semiconductor device and method of manufacturing semiconductor device
  • Semiconductor device and method of manufacturing semiconductor device
  • Semiconductor device and method of manufacturing semiconductor device

Examples

Experimental program
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Embodiment Construction

[0032] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Note that, in this specification and the appended drawings, structural elements that have substantially the same function and structure are denoted with the same reference numerals, and repeated explanation of these structural elements is omitted.

[0033] Hereinafter, embodiments related to the present technology will be described.

[0034] Description will be made in the following order.

[0035]

[0036]

[0037]

[0038]

[0039]

[0040] figure 1 is a diagram showing a cross-sectional configuration of a semiconductor device 1 according to an embodiment of the present technology. First, assume that the semiconductor device 1 according to the present embodiment is a semiconductor device serving as a solid-state imaging element. In the drawings, the semiconductor layer 2 is used, for example, as a sensor unit of a solid-st...

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PUM

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Abstract

The present invention relates to semiconductor devices and methods of manufacturing semiconductor devices. Provided is a semiconductor device including a semiconductor layer; a protective layer including a transparent material; and a transparent resin layer sealing a gap between the semiconductor layer and the protective layer. A shatterproof member having a Young's modulus higher than that of the transparent resin layer is formed as a semiconductor layer in a cut portion of the layer structure before division, and cutting is performed in the cut portion for division.

Description

technical field [0001] The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device, and more particularly, to a shatterproof member for providing a Young's modulus higher than that of a transparent resin layer in a cutting portion and preventing semiconductor damage caused in cutting. Fragmentation of layers of technical fields. Background technique [0002] Japanese Unexamined Patent Application Publication No. 2008-66679 is an example of related art. [0003] In recent years, PKGs (packages) of solid-state imaging elements (image sensors) have been mass-produced in a form called chip-size PKG (hereinafter abbreviated as CSP). Such a CSP is different from a related art cavity PKG formed of ceramics or molded resin. For example, as a cavity configuration in which gaps between adjacent chips are partitioned by a resin wall on the wafer is formed, a protective layer (for example, transparent glass) of the sensor unit and a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/8238
CPCH01L23/562H01L23/3114H01L24/94H01L27/14618H01L2924/181H01L21/78H01L2924/00H01L23/29H01L21/30H01L23/00H01L23/544H01L27/146
Inventor 高地泰三胁山悟
Owner SONY CORP