Method for manufacturing capacitors with large unit capacitance in ordinary LOGIC process

Abstract

The invention discloses a method for manufacturing capacitors with large unit capacitance in an ordinary LOGIC process. On the basis of MOM capacitors, capacitors of MOS transistors are added. A metal insertion finger is designed for the MOM capacitors according to a minimum process dimension, multiple metal layers are arranged according to the structure of the insertion finger, and the arrangement of the MOM capacitors formed by the different metal layers is completely the same. The MOM capacitors and the capacitors of the MOS transistors are of a perpendicular structure, and the capacitors of the MOS transistors are located below the MOM capacitors. The source electrode and the drain electrode of each MOS transistor are connected to form one end of the corresponding capacitor, and the grid electrode of each MOS transistor forms the other end of the corresponding capacitor. The two ends of each MOM capacitor are connected with the two ends of the capacitor of the corresponding MOS transistor, and therefore a parallel connection frame is formed. According to the method, in the specific process, under the condition that the MASK is not increased, the capacitors with the largest unit capacitance are manufactured. When the method is used, production cost of chips can be obviously reduced under the condition that functions of the chips are ensured.

Description

technical field [0001] The invention relates to the production of large unit capacity capacitors, especially for the production of chips that do not support MIM capacitors and have higher requirements on unit capacity. Background technique [0002] At present, MIM (metal-insulator-metal) capacitors are provided in a few processes, but this requires an additional layer of MASK (mask), which not only increases the one-time production cost of MASK, but also causes 3 to the price of WAFER (chip). % to 8% of the cost increase. For the current chip market with increasingly fierce price competition, capacitors made by MIM are definitely not the best way. Other processes provide MOM (metal-oxide-metal) capacitors, or require chip designers to design MOM capacitors themselves. However, the unit capacitance of a simple MOM capacitor is low. For circuit designs that require large capacitors, it is necessary to increase the area of ​​the MOM capacitor to increase the capacitance value...

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the problems that MIM capacitors are not supported in many current processes and the unit capacitance of MOM is too small, and provides a method for manufacturing capacitors with large unit capacitances in most common LOGIC processes at present, which does not require additional Adding MASK is just to use the existing MASK to make a capacitor with the largest unit capacitance

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