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Semiconductor temperature difference matrix power generation device

A power generation device and thermoelectric power generation technology, applied in the directions of generators/motors, electrical components, etc., can solve the problem of high cost of thermoelectric semiconductors, and achieve the effects of good thermal conductivity, high power generation efficiency, and high solution costs.

Inactive Publication Date: 2014-04-30
吴佳明
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a semiconductor temperature difference matrix power generation device, which utilizes multiple single power generation devices to flow into the inverter system for power generation, which is easy to operate and solves the problems of high cost of the existing temperature difference semiconductors. High efficiency, can be applied on a large scale, and the power generation can be adjusted according to needs

Method used

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  • Semiconductor temperature difference matrix power generation device
  • Semiconductor temperature difference matrix power generation device
  • Semiconductor temperature difference matrix power generation device

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Embodiment

[0019] refer to figure 1 , a kind of semiconductor temperature difference matrix power generation device of the present invention, by semiconductor thermoelectric power generation block 2 and be respectively arranged on this power generation block 2 two ends positive temperature copper block 1 and negative temperature copper block 3 by screw connection, semiconductor thermoelectric power generation block 2 and positive temperature copper block Block 1 and negative temperature copper block 3 are respectively fixed and closed by fixing silica gel.

[0020] refer to Figure 2-3 The semiconductor thermoelectric power generation block 2 includes a semiconductor power generation block 2-1, a positive terminal 2-2 and a negative terminal 2-3 which are arranged in the semiconductor power generation block 2-1 and respectively run through the upper and lower ends of the semiconductor power generation block 2-1. and the metal conductor 2-5 coated outside the semiconductor power generat...

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Abstract

The invention discloses a semiconductor temperature difference matrix power generation device. The semiconductor temperature difference matrix power generation device comprises a semiconductor temperature difference power generation block, a positive temperature copper block and a negative temperature copper block, wherein the positive temperature copper block and the negative temperature copper block are arranged at the two ends of the semiconductor temperature difference power generation block respectively, the semiconductor temperature difference power generation block and the positive temperature copper block are fixed and sealed through fixing silica gel, and the semiconductor temperature difference power generation block and the negative temperature copper block are fixed and sealed through fixing silica gel. The semiconductor temperature difference matrix power generation device enables multiple power generation devices to be converged into an inverter system for power generation, is convenient to operate, solves the problems that an existing temperature difference semiconductor is high in cost and the like, and has the advantages of being good in heat conduction effect, high in power generation efficiency, wide in application range, low in cost, capable of adjusting the generated power according to needs, and suitable for wide-range popularization.

Description

technical field [0001] The invention relates to semiconductor power generation technology, in particular to a semiconductor temperature difference matrix power generation device. Background technique [0002] Temperature difference semiconductor is a technology that uses the Petier effect and Seebeck effect of semiconductor materials to absorb heat and release heat by energizing both ends of the P. N-type semiconductor material or provide a temperature difference between the two ends of the P. N-type semiconductor material to generate electricity. A semiconductor device that does not require chemical reactions and has no mechanical moving parts, so it has the characteristics of light weight, no noise, no pollution, fast start-up, precise control and use of various heat sources to generate electricity, and is widely used in various fields. field. With the shortage of energy and people's increasing awareness of environmental protection, especially the problem of global warm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02N11/00
Inventor 吴佳明
Owner 吴佳明
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