A method of determining focus corrections, lithographic processing cell and device manufacturing method

A technology of focusing position and lithography unit, which is applied in the direction of microlithography exposure equipment, photoplate making process of pattern surface, optics, etc.

Inactive Publication Date: 2014-05-07
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This approach can result in a focus position that is up to 50 times more sensitive to misalignment than LVT (typically dX,Y / dZ=20)

Method used

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  • A method of determining focus corrections, lithographic processing cell and device manufacturing method
  • A method of determining focus corrections, lithographic processing cell and device manufacturing method
  • A method of determining focus corrections, lithographic processing cell and device manufacturing method

Examples

Experimental program
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Embodiment Construction

[0027] figure 1 A lithographic apparatus is schematically shown. The equipment includes:

[0028] - an illumination system (illuminator) IL configured to condition a radiation beam B (eg, ultraviolet (UV) radiation or deep ultraviolet (DUV) radiation);

[0029] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to first positioning means PM configured to precisely position the patterning device according to determined parameters;

[0030] - a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and associated with a second positioning device PW configured to precisely position the substrate according to determined parameters connected; and

[0031] - a projection system (e.g. a refractive projection lens system) PL configured to project the pattern imparted to the radiation beam B by the patterning device MA onto a target portion C of the substrate W (e.g. comprisin...

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PUM

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Abstract

Disclosed is a method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it, measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information, and calculating interfield focus corrections from said interfield focus variation information.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application 61 / 529,586, filed August 31, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] The invention relates to an inspection method that can be used, for example, in the manufacture of devices by photolithographic techniques. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of said substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70641G03F7/70616G03F7/70625G03F9/7026
Inventor A·基斯特曼A·基尔W·泰尔T·希尤维斯
Owner ASML NETHERLANDS BV
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