Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integrated Magnatoresistive Sensing device

A technology of magnetoresistive sensors and magnetoresistive sensing elements, applied to instruments, measuring magnetic variables, measuring devices, etc., can solve problems such as difficult testing and adjustment

Inactive Publication Date: 2014-05-21
VOLTAFIELD TECH
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the trend of miniaturization and complex packaging of magnetoresistive components will cause difficulties in testing and adjustment, so a self-testing circuit is needed to solve this problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated Magnatoresistive Sensing device
  • Integrated Magnatoresistive Sensing device
  • Integrated Magnatoresistive Sensing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] What the present invention is discussing here is an integrated magnetoresistive sensor, especially for the magnetoresistive sensor element and its built-in self-test unit for sensing the magnetic field in the Z-axis direction, and can include other structures commonly used in sensors such as: Setting / resetting circuit; magnetoresistive sensing element for sensing the magnetic field in the X / Y axis direction; various circuits for amplifying signals, filtering signals, and converting signals; shielding unwanted electromagnetic interference shielding structure....etc. In order to describe the present invention thoroughly and clearly without blurring the focus of the present invention, these commonly used structures are not introduced, but the integrated magnetoresistive sensor of the present invention may optionally include these commonly used structures.

[0037] The preferred embodiments of the present invention will be described in detail below. For example, all compone...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface.

Description

technical field [0001] The present invention relates to an integrated magnetic field sensor, and more particularly to an integrated magnetic field sensor with a built-in-self-test (BIST) unit. Background technique [0002] The magnetoresistive material contained in the magnetoresistive component can change its resistance value in response to the change of the magnetic field intensity, and is currently widely used in sports products, automobiles, motors, and communication products. Common magnetoresistance materials can be divided into anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) according to their different modes of action and sensitivity. ) and other types. [0003] Generally speaking, the magnetic field measured by the magneto-resistance component changes very little. If there is no accurate test, setting, and adjustment, the result will be lost thousands of miles. However, the trend of miniaturization and compl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09
CPCG01R33/093
Inventor 李乾铭傅乃中陈光镜
Owner VOLTAFIELD TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com