Realizing method of ultra-large capacity solid state disk

Abstract

The invention provides a realizing method of an ultra-large capacity solid state disk. A solid state disk with the capacity of at least TB level can be realized. A storage medium which is large in single capacity and is provided with an SD / MMC interface is used on the disk; each storage channel can contain a plurality of storage media; the storage media in each storage channel share D[0 : 7] / CMD data buses of the SD / MMC interfaces; and SD / MMC interface clock signals of each storage channel are connected into the storage media through high-speed clock switch circuits, the SD / MMC interface clock signals are used as chip selection for controlling, so that the number of the storage media contained in a single storage channel of a disk controller is increased manifold, then the capacity of the disk is increased manifold, and the ultra-large capacity solid state disk is realized.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a method for realizing an ultra-large-capacity solid-state hard disk. Background technique [0002] In recent years, with the increasing application of solid-state hard drives based on flash memory media, greater requirements have been placed on the single capacity of such hard drives, especially in applications requiring massive data storage, such as database servers and redundant disk arrays. . [0003] Traditional solid-state drives use multiple parallel storage channels to achieve high-speed data reading and writing and capacity expansion. Each storage channel uses chip select signal control to select multiple flash chips. Therefore, the maximum capacity of a solid-state drive depends on its main The number of storage channels of the controller, the number of chip selection controls, and the single capacity of the flash memory chip, etc. [0004] The main controller chip of the ...

AI Technical Summary

Problems solved by technology

[0004] The main controller chip of the solid-state hard disk is limited by its architecture and the number of package pins, and the number of parallel storage channels and chip selection controls are limited; in addition, the traditional flash memory chip uses the ONFI / Toggle data interface protocol, which has a single capacity bias. The shortcomings of small size and large number of data interface pins, although with the advancement of integrated circuit technology, the capacity of a single cell has a tendency to gradually increase, such as from 4GB to 8GB, or even 16GB, etc., but in terms of large-capacity applications, flash memory The capacity of a single unit is still relatively small; in terms of the volume of a solid-state drive, such as a standard 2.5-inch solid-state drive, it also limits the number of configurations of flash memory chips

[0005] Therefore, there is a big bottleneck in the design and implementation of traditional solid-state hard disks in terms of large capacity, especially the ultra-large capacity above the terabyte level.

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