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How to operate the flash memory unit

A technology of a flash memory unit and an operation method, which is applied in the field of memory, can solve the problems of low durability of the flash memory unit, and achieve the effect of improving durability

Active Publication Date: 2017-02-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The invention solves the problem that the traps in the flash memory unit cause low durability of the flash memory unit

Method used

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  • How to operate the flash memory unit
  • How to operate the flash memory unit
  • How to operate the flash memory unit

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0039] right figure 1 When the shown flash memory cell M0 performs an erase operation, the electrons in the first floating gate 105 are attracted to the The first bit line electrode 101; through the tunnel effect between the second floating gate 107 and the second bit line electrode 102, electrons in the second floating gate 107 are attracted to the second bit line electrode 102. In order to erase the electrons stored in the first floating gate 105 and the second floating gate 107 , a high voltage needs to be applied to each electrode of the flash memory cell M0 . Under the effect of high voltage, a strong electric field is formed between the first floating gate 105 and the first bit line electrode 101 , and a strong electric field is formed between the second floating gate 107 and the second bit line electrode 102 . The strong electric field will cause a lattice shift between the floating gate and the bit line electrode. For example, after performing multiple erasing operat...

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Abstract

An operating method for a flash memory unit comprises the following steps: when conducting a reading operation on a first storage bit, exerting a first read voltage to a middle electrode, exerting a second read voltage to a first control grid, exerting a third read voltage to a second control grid and a first bit line electrode, and connecting a second bit line electrode and a read circuit; when conducting the reading operation on a second storage bit, exerting the first read voltage to the middle electrode, exerting the second read voltage to the second control grid, exerting the third read voltage to the first control grid and the second bit line electrode, and connecting the first bit line electrode and the read circuit. The operating method for the flash memory unit provided by the invention improves the durability of the flash memory unit.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a method for operating a flash memory unit. Background technique [0002] As an integrated circuit storage device, flash memory (flash memory) is widely used in portable computers, mobile phones, digital music players, etc. devices and other electronic products. Generally, flash memory is divided into two types, stacked gate flash memory and split gate flash memory, according to different gate structures of flash memory cells. Both types of flash memory need to arrange the flash memory cells in an array suitable for their own operation, and each flash memory cell is used to store a single bit of data. Among them, split-gate flash memory cells are widely used because they can effectively avoid over-erasing effects and have higher programming efficiency. [0003] figure 1 It is a schematic cross-sectional structure diagram of an existing flash memory unit M0. The flash memory un...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06G11C16/14G11C16/26
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP