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Bit failure detection method

A detection method and bit technology, applied in static memory, instruments, etc., can solve the problems of bit abnormality and failure, and achieve the effect of improving the detection effect

Active Publication Date: 2017-01-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the durability test (endurance cycle) is performed from client 2, due to the durability test, the initial current of the bit is reduced to 22μA, and the normal write disturbance mode can reduce the current of the bit to 10μA, resulting in failure , which means that the bit is actually abnormal and should be screened out in the testing phase

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Embodiment Construction

[0014] In the following, the bit invalidation detection method of the present invention will be described in more detail with reference to the schematic diagram, which shows the preferred embodiment of the present invention. It should be understood that those skilled in the art can modify the present invention described here and still achieve the advantageous effects of the present invention. . Therefore, the following description should be understood to be widely known to those skilled in the art, and not as a limitation to the present invention.

[0015] For the sake of clarity, not all features of actual embodiments are described. In the following description, well-known functions and structures are not described in detail because they may confuse the present invention due to unnecessary details. It should be considered that in the development of any actual embodiment, a large number of implementation details must be made to achieve the developer's specific goal, such as chan...

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Abstract

The invention discloses a bit failure detection method. The method comprises the following steps of providing a reference current and a boundary coefficient, comparing the current of the to-be-detected bit with a product of the reference current and the boundary coefficient, and judging the bit to be in failure if the current of the to-be-detected bit is greater than the product of the reference current and the boundary coefficient, wherein the boundary coefficient is greater than or equal to 1. By adopting the method, the detection effect of abnormal bit can be improved, and the product performance can be improved.

Description

Technical field [0001] The present invention relates to the technical field of memory detection, and in particular to a bit failure detection method. Background technique [0002] Flash memory (Flash Memory) is a long-life non-volatile memory that can still retain stored data and information in the event of a power failure. Flash memory is a variant of electronically erasable read-only memory (EEPROM). Unlike EEPROM, flash memory can be deleted and rewritten at the byte level instead of erasing and writing the entire chip, which makes flash memory faster than EEPROM. Faster. [0003] In the current flash memory, there is usually a relatively large capacity, that is, a corresponding number of bits. In such a large number of bits, the quality of its quality conforms to the normal distribution. Therefore, how to ensure that the bits outside 3σ (tail The pros and cons of bit (tail bit) will directly restrict the performance of flash memory. [0004] A common method in the prior art is...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/08
Inventor 钱亮孔蔚然贾敏
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP