Fin field effect transistor and method of forming the same

Abstract

Provided are a fin type filed effect transistor and a forming method thereof. The forming method comprises the steps that a semiconductor substrate with a fin part is provided, and the fin part stretches in the first direction; a stress layer is formed on the side face of the fin part in the first direction; a pseudo grid is formed in the second direction, the pseudo grid stretches across the stress layer and the fin part, and the first direction is perpendicular to the second direction; in the second direction, first side walls are formed on the two sides of the pseudo grid, and the first side walls stretch across the stress layer and the fin part; the parts, uncovered by the first side walls and the pseudo grid, of the stress layer are removed; after the parts, uncovered with the first side walls and the pseudo grid, of the stress layer are removed, an interlayer medium layer is formed, and the upper surface of the interlayer medium layer is flushed with the upper layer of the pseudo grid; the pseudo grid and the part, under the pseudo grid, of the stress layer are removed, and a pseudo grid groove is formed; a grid medium layer and a conducting layer located on the grid medium layer are formed in the pseudo grid groove, and the conducting layer serves as a grid. The parts, under the first side walls, of the stress layer provide stress to adjacent groove areas, and the performance of the fin type filed effect transistor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] As we all know, transistors are key components in integrated circuits. In order to increase the operating speed of the transistor, it is necessary to increase the driving current of the transistor. And because the drive current of the transistor is proportional to the gate width of the transistor, to increase the drive current, the gate width needs to be increased. However, as the integration of integrated circuits becomes higher and higher, the size of the transistor itself is reduced proportionally, and the simple increase of the gate width conflicts with the proportional reduction of the size of the transistor itself, so the fin field effect transistor was developed. (FinFETs). [0003] For the structure of the existing Fin Field Effect Transistor (FinFET), please refer to figu...

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Problems solved by technology

[0006] The problem solved by the present invention is the degraded performance of existing fin field effect transistors (FinFETs)

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