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Semiconductor processing device and degas chamber and heating assembly thereof

A technology for heating components and processing equipment, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. It can solve the problems of uneven temperature fragments, affecting the process, and unclean removal of volatile impurities, so as to achieve good heating uniformity, Increased productivity, easy-to-achieve effects

Inactive Publication Date: 2014-06-04
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the substrate is heated unevenly, volatile impurities in some areas will not be removed cleanly, which will affect the subsequent process, and severe local temperature unevenness will even cause debris

Method used

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  • Semiconductor processing device and degas chamber and heating assembly thereof
  • Semiconductor processing device and degas chamber and heating assembly thereof

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Embodiment Construction

[0024] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0025] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying Describes, but does not indicate or imply that the device or element referred...

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PUM

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Abstract

The invention discloses a semiconductor processing device and a degas chamber and a heating assembly thereof. The heating assembly comprises a light condensation cover and multiple heating bulbs. The light condensation cover is provided with a plane part which is arranged at the center and an arc-shaped cover edge part which is connected with the circumferential edge of the plane part. The multiple heating bulbs are arranged on the internal surface of the plane part. According to the heating assembly of the embodiment of the invention, light of the multiple heating bulbs can be reflected via the plane part and the arc-shaped cover edge part. With the structure, heating uniformity of the heating assembly is great, and energy emitted by the heating bulbs is reflected into the degas chamber in full effect so that energy of light rays arriving at a substrate in the degas chamber is increased, temperature of the substrate reaches technology temperature more rapidly and enhancement of production efficiency is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to semiconductor processing equipment, a degassing chamber and a heating assembly for the semiconductor processing equipment. Background technique [0002] Copper interconnect PVD equipment generally goes through four processes, degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. In the degassing process, the substrate is mainly placed inside the degassing chamber, and the substrate is heated to about 350°C to remove water vapor and other volatile impurities on the substrate. [0003] When performing the degassing process, on the one hand, it is hoped that the substrate can reach the process temperature as soon as possible, so that the number of substrates processed per unit time can be increased, and the production efficiency can be improved. On the other hand, during the degassing process, it is necessary to ensure that the substrate is heated evenly. ...

Claims

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Application Information

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IPC IPC(8): H01L21/67
CPCH01L21/67115
Inventor 徐桂玲
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD