FinFET and manufacturing method thereof

Abstract

The invention discloses a FinFET and a manufacturing method thereof. The manufacturing method of the FinFET comprises the steps of forming a semiconductor fin with a trapezoidal cross section, forming one of a source region and a drain region, forming a sacrifice side wall, using the sacrifice side wall as a mask, forming the other one of the source region and the drain region, removing the sacrifice side wall, and using a gate stack for replacing the sacrifice side wall, wherein the gate stack comprises a gate conductor and gate dielectric media, and the gate dielectric media partition the gate conductor and the semiconductor fin.

Description

Technical field [0001] The present invention relates to semiconductor technology, and more specifically, to FinFET and a manufacturing method thereof. Background technique [0002] As the size of the planar semiconductor device becomes smaller and smaller, the short channel effect becomes more and more obvious. To this end, three-dimensional semiconductor devices such as FinFET (Fin Field Effect Transistor) have been proposed. The FinFET includes a semiconductor fin for forming a channel region and a gate stack covering at least one sidewall of the semiconductor fin. The gate stack intersects the semiconductor fin and includes a gate conductor and a gate dielectric. The gate dielectric separates the gate conductor and the semiconductor fin. The FinFET can have a double-gate, triple-gate, or ring-gate configuration, and the width (ie, thickness) of the semiconductor fin is small. Therefore, the FinFET can improve the gate conductor's control of carriers in the channel region an...

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Problems solved by technology

However, as the size of devices shrinks, it becomes more and more difficult to form ga

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