A kind of organic electroluminescent device and preparation method thereof
An electroluminescence device and electroluminescence technology, which are applied in the direction of organic semiconductor devices, materials of organic semiconductor devices, electric solid devices, etc., to achieve the effect of prolonging the life of the device, improving the heat dissipation capacity, and excellent packaging effect.
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Embodiment 1
[0058] A method for preparing an organic electroluminescent device, comprising the following steps:
[0059] (1) Pre-treatment of ITO conductive glass substrate 1: put ITO conductive glass substrate 1 into acetone, ethanol, deionized water, and ethanol in sequence, ultrasonically clean them for 5 minutes, then blow dry with nitrogen, and dry them in an oven for later use; The cleaned ITO glass substrate 1 is subjected to surface activation treatment to increase the oxygen content of the conductive surface layer and improve the work function on the surface of the conductive layer; the thickness of the ITO conductive glass substrate 1 is 100nm;
[0060] (2) Preparation of functional layer and light-emitting layer:
[0061] Hole injection layer 2: Evaporate MoO on the ITO conductive glass substrate 1 3 Hybrid material obtained by doping NPB, MoO 3 The doping mass fraction is 30%, and the evaporation is carried out by high-vacuum coating equipment, and the vacuum degree during e...
Embodiment 2
[0076] A method for preparing an organic electroluminescent device, comprising the following steps:
[0077] (1), (2), (3) are the same as embodiment 1;
[0078] (4) Preparation of protective layer: NPB was prepared on the cathode layer by vacuum evaporation with a vacuum degree of 5×10 -5 Pa, the evaporation rate is The thickness is 300nm;
[0079] (5) Preparation of sulfide layer: The sulfide layer is prepared on the protective layer by magnetron sputtering, and the material of the sulfide layer is MoS 2 , the sputtering target is MoS 2 , the feeding gas is argon, the gas flow rate is 10 sccm, and the background vacuum is 2×10 -4 Pa, the thickness is 120nm;
[0080](6) Preparation of organic barrier layer: The organic barrier layer was prepared on the sulfide layer by spin coating first and then exposed. The material of the organic barrier layer was methacrylic resin, which was produced under an inert atmosphere, and the coating thickness was 1.5 μm. , and then cured ...
Embodiment 3
[0087] A method for preparing an organic electroluminescent device, comprising the following steps:
[0088] (1), (2), (3) are the same as embodiment 1;
[0089] (4) Preparation of protective layer: prepare Alq on the cathode layer by vacuum evaporation 3 , the vacuum degree is 8×10 -5 Pa, the evaporation rate is The thickness is 250nm;
[0090] (5) Preparation of sulfide layer: The sulfide layer is prepared on the protective layer by magnetron sputtering, and the material of the sulfide layer is TaS 2 , the sputtering target is TaS 2 , the feeding gas is argon, the gas flow rate is 11sccm, and the background vacuum is 1×10 -5 Pa, the thickness is 150nm;
[0091] (6) Preparation of organic barrier layer: The organic barrier layer was prepared on the sulfide layer by spin coating first and then exposed. The material of the organic barrier layer was cycloaliphatic epoxy resin, which was produced under an inert atmosphere. The coating thickness was 1.2 μm, and then cured ...
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