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Trench mosfet and method of making the same

A trench and insulating layer technology, which is applied in the field of trench MOSFET and its manufacturing, can solve the problems of trench MOSFET electrical performance degradation, etc., and achieve the effects of improving thickness uniformity, increasing breakdown voltage, and reducing influence

Active Publication Date: 2018-11-02
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of this, the object of the present invention is to provide a trench MOSFET and its manufacturing method to solve the problem in the prior art that the electrical performance of the trench MOSFET is deteriorated due to the poor quality of the intermediate insulating layer

Method used

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Embodiment Construction

[0031] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0032] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0033] If it is to describe the situation directly on another layer or an...

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Abstract

A trench MOSFET and method of manufacturing the same are disclosed. The trench MOSFET includes: an epitaxial semiconductor layer on a semiconductor substrate; a trench extending from above the epitaxial semiconductor layer into its interior; a shielding conductor, at least a part of which is located in the lower part of the trench; an intermediate insulating layer, located above the shielding conductor; The dielectric is located on the upper sidewall of the trench; the gate conductor is located on the upper part of the trench and is separated from the shield conductor by an intermediate insulating layer; the well region is located in the epitaxial semiconductor layer and is adjacent to the trench; the source region is located in the In the well region, and adjacent to the trench; the source contact, the drain contact, the gate contact and the shielding contact are respectively electrically connected to the source region, the semiconductor substrate, the gate conductor and the shielding conductor, wherein the shielding conductor is connected to the epitaxial semiconductor layer The insulating stacks are separated by an insulating stack including at least one oxide layer and at least one nitride layer. Trench MOSFETs can improve the quality of the intermediate insulating layer, thereby increasing the breakdown voltage.

Description

technical field [0001] This invention relates to semiconductor technology, and more particularly, to trench MOSFETs and methods of manufacturing the same. Background technique [0002] Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been widely used as power semiconductor devices, for example as switches in power converters. [0003] A MOSFET may have a planar structure in which a source region and a drain region are formed on one side of a semiconductor substrate, and a gate conductor is located above the surface of one side of the semiconductor substrate, separated from the semiconductor substrate by a gate dielectric. MOSFETs can also have a vertical structure in which a source region is formed on one side of the semiconductor substrate, a drain region is formed on the other side, and a gate conductor extends into the interior of the semiconductor substrate, separated from the semiconductor substrate by a gate dielectric. [0004] On the basis of the ve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0611H01L29/0649H01L29/66666H01L29/7828H01L29/7813H01L29/407H01L29/42376H01L29/41766H01L29/66734
Inventor 童亮
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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