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Thin-film transistor array substrate

A technology of thin film transistors and array substrates, applied in the field of liquid crystal display, can solve problems such as the decrease of aperture ratio, and achieve the effect of increasing storage capacitance

Active Publication Date: 2014-07-02
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the prior art, if the storage capacitance of the pixel is to be increased, the aperture ratio will inevitably decrease.

Method used

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  • Thin-film transistor array substrate
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  • Thin-film transistor array substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] image 3 Shown is the structure of the thin film transistor array substrate in the embodiment of the present invention. Such as image 3 As shown, 301 is the substrate, 302 is the active layer, 303 is the gate, 304 is the source electrode, 305 is the drain electrode, 306 is the pixel electrode, 307 is the transparent conductive layer of the light-shielding electrode, and 308 is the non-conductive layer of the light-shielding electrode. The transparent conductive layer, 309 is the first electrode of the storage capacitor, 310 is the second electrode of the storage capacitor, 311 is the first insulating layer, 312 is the second insulating layer, 313 is the third insulating layer, 314 is the passivation layer, 315 for the flattening layer.

[0039] In this embodiment, preferably, the substrate 301 is a transparent substrate, specifically, its material may be glass or a transparent organic material.

[0040] The transparent conductive layer 307 of the light-shielding ele...

Embodiment 2

[0062] Such as Figure 5 As shown, the difference between the second embodiment and the first embodiment is that the second electrode 501 of the storage capacitor is formed at the same time as the active layer 302 , and is located on the same layer and uses the same material. Preferably, the second electrode 501 of the storage capacitor is electrically connected to the drain region 302b. Since the drain region 302 b is electrically connected to the drain electrode 305 and the drain electrode 305 is electrically connected to the pixel electrode 306 , the potential of the second electrode 501 of the storage capacitor is equal to the potential of the pixel electrode 306 .

[0063] Similarly, the embodiments of the present invention use the transparent electrode on the same layer as the light-shielding electrode as the first electrode of the storage capacitor to effectively use the existing space and increase the storage capacitor without reducing the aperture ratio.

Embodiment 3

[0065] Such as Figure 6 As shown, the difference between the third embodiment and the first embodiment is that the second electrode of the storage capacitor is the pixel electrode 306 . The storage capacitor is formed between the first electrode 309 of the storage capacitor and the pixel electrode 306 .

[0066] In an embodiment of the present invention, the storage capacitor is mainly formed between the first electrode of the storage capacitor on the same layer as the light-shielding electrode and the second electrode of the storage capacitor, the protection scope of the present invention is not limited thereto, for example, the storage capacitor It may include a first electrode, a second electrode, a third electrode, and a fourth electrode, the first electrode is on the same layer as the light-shielding electrode, the second electrode is on the same layer as the active layer, and the third electrode is on the same layer as the drain electrode In the same layer, the fourth ...

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Abstract

The invention provides a thin film transistor array substrate including: a substrate; a plurality of pixel elements disposed on the substrate, each of the pixel elements including a thin film transistor and a pixel electrode electrically connected with the thin film transistor; a light shielding electrode disposed between the substrate and the thin film transistor to shield a channel of the thin film transistor; and a storage capacitor including a first electrode and a second electrode disposed opposite to each other. With the thin film transistor array substrate according to the invention for which the design of the storage capacitor is improved, the storage capacitor can be added without lowering an aperture ratio to thereby improve the uniformity of a picture and other performances of the display panel effectively.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, in particular to a thin film transistor array substrate with an improved design of a storage capacitor. [0002] Background technique [0003] Among the existing flat-panel display technologies, liquid crystal display (hereinafter referred to as LCD) can be said to be one of the most mature technologies. For example, common mobile phones, digital cameras, video cameras, notebook computers, monitors, etc. Products manufactured by this technology. In LCD technology, thin-film transistor liquid crystal display (hereinafter referred to as TFT LCD) has low power consumption, relatively low manufacturing cost, and excellent characteristics in light transmittance and aperture ratio, so it currently occupies a dominant position in the LCD market. [0004] like figure 1 and figure 2 As shown, the prior art thin film transistor array (hereinafter referred to as TFT) substrate includes a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12
CPCG02F1/136213H01L29/78633H01L27/1255G02F1/136209G02F2201/40
Inventor 蔡韬赵本刚
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD