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Semiconductor device and method for producing same

一种半导体、器件的技术，应用在半导体器件及其制造领域，能够解决击穿电压特性降低等问题，达到击穿电压特性的降低抑制、抑制击穿电压的降低、容易切换的效果

Active Publication Date: 2014-07-09
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a trench gate type MOSFET, on-resistance can be reduced, but breakdown voltage characteristics are disadvantageously degraded due to electric field concentration in the bottom of the trench

Method used

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  • Semiconductor device and method for producing same
  • Semiconductor device and method for producing same
  • Semiconductor device and method for producing same

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Embodiment Construction

[0039] Embodiments of the present invention are described below with reference to the drawings. It should be noted that in the drawings described below, the same or corresponding parts are given the same reference numerals and are not described repeatedly. Also, in this specification, an individual orientation is represented by [ ], a group face is represented by , an individual face is represented by ( ), and a group face is represented by {}. In addition, negative indices should be indicated crystallographically by putting "-" (bar) in front of the number, but are indicated by putting a minus sign in front of the number in this specification.

[0040] First, the structure of MOSFET 1 used as a semiconductor device according to an embodiment of the present invention is described below. refer to figure 1 , the MOSFET 1 includes: a substrate 10 made of silicon carbide and having a main surface 10a; a gate insulating film 20; a gate electrode 30; an interlayer insulating film ...

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PUM

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Abstract

A MOSFET (1) is provided with: a first trench (16) opening to a principal-surface (10a) side; a substrate (10) comprising silicon carbide, being open on the principal-surface (10A) side thereof, and having second trenches (17) formed therein which are shallower than the first trench (16); a gate-insulating film (20); a gate electrode (30); and a source electrode (50) positioned so as to contact the top of side surfaces (17a) of the second trenches (17). The substrate (10) includes a source region (15), a body region (14), and a drift region (13). The first trench (16) is formed so as to penetrate through the source region (15) and the body region (14), and extend into the drift region (13). The second trenches (17) are formed so as to penetrate through the source region (15), and extend into the body region (14).

Description

technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly, to a semiconductor device in which a decrease in breakdown voltage characteristics is suppressed and a response speed is improved, and a method for manufacturing such a semiconductor device . Background technique [0002] In recent years, in order to realize high breakdown voltage, low loss, etc. in semiconductor devices, silicon carbide has been adopted as a material for semiconductor devices. Silicon carbide is a wide bandgap semiconductor having a bandgap larger than that of silicon, which has conventionally been used as a material for semiconductor devices. Therefore, by employing silicon carbide as a material for a semiconductor device, the semiconductor device can have a high breakdown voltage, reduced on-resistance, and the like. [0003] An exemplary semiconductor device employing silicon carbide as its mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/12H01L21/336H01L29/78
CPCH01L21/0475H01L21/0485H01L29/41766H01L29/66068H01L29/7813H01L29/4236H01L29/45H01L29/045H01L21/049H01L29/7802H01L29/66712
Inventor 增田健良和田圭司日吉透松川真治
Owner SUMITOMO ELECTRIC IND LTD