A Static Random Access Memory and Its Bit Line Precharge Self-timing Circuit

Abstract

The invention provides a static random access memory and a bit line pre-charging self-timing circuit thereof. A duplication unit is used for simulating load on a normal bit line; a duplication bit line pre-charging circuit is used for simulating a pre-charging circuit of the normal bit line and pre-charging and resetting a duplication bit line; a state machine circuit is used for controlling conversion between beginning and ending states of duplication bit-line pre-charging operations and producing self-timing signals for normal bit-line pre-charging operations. The circuit simulates the pre-charging process of the normal bit line so as to provide accurate self-timing for bit-line pre-charging operations of the static random access memory at different process voltage temperatures. Compared with a traditional method for generating a bit-line pre-charging signal in a delay mode based on a phase inverter chain, the circuit has excellent capability of resisting deviation of process voltage temperature.

Description

[0001] 【Technical field】 [0002] The invention relates to the field of static random access memory design, in particular to a static random access memory and a bit line precharge self-timing circuit thereof. [0003] 【Background technique】 [0004] According to the forecast of the International Semiconductor Technology Roadmap (ITRS), the area of ​​the SRAM will become larger and larger, and by 2015, it will account for more than 94% of the area of ​​the entire system-on-chip (SOC). With the continuous evolution of process technology and the continuous shrinking of the size of semiconductor devices, local and global process deviations have an increasing impact on the performance and reliability of integrated circuits. [0005] see figure 1 as shown, figure 1 It is a schematic diagram of a typical SRAM data path. The typical datapath includes bit line precharge and equalization circuits, memory cells, sense amplifiers and write drivers. [0006] The pre-charging and equaliz...

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Problems solved by technology

[0010] like figure 2 As shown, the traditional precharge signal based on the inverter chain delay is sensitive to the process voltage temperature (PVT) environment, so it is necessary to leave a lot of margin in the design, the read and write access time of the static memory and the minimum The clock period will have a negative impact on

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