Process method for surface sacrificial layer of mems device prepared by using soi sheet
A sacrificial layer and device layer technology, applied in the process of producing decorative surface effects, metal material coating process, coating and other directions, can solve the problem of inability to complete the structure, achieve large commercial value and market, reduce structural layers Bending, high-yield effects
Active Publication Date: 2016-04-06
PEKING UNIV
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In addition, it cannot complete some specific structures, such as the production of movable gears
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[0036] The present invention will be further described below through specific embodiments and accompanying drawings.
[0037] Figure 1-8 Utilize the SOI sheet of the present invention to prepare the step flowchart of the surface sacrificial layer process method of MEMS device, its step is specifically described as follows:
[0038] 1) On the SOI substrate, define the structure area by photolithography, etch the single crystal silicon 2 of the device layer and the silicon oxide 3 of the buried oxide (BOX) layer to the surface of the substrate 1, wherein the buried oxide layer is used as the first sacrificial layer, such as figure 1 shown.
[0039] The SOI sheet described in this step is a low-stress SOI sheet, the thickness of the Si layer of the device layer is the thickness of the MEMS structure layer, the thickness of the BOX layer is the thickness of the first sacrificial layer, the thickness of the Si layer is preferably 1.5 μm, and the thickness of the BOX layer is pref...
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Abstract
The invention relates to a method for preparing a surface sacrificial layer of a microelectronic mechanical system (MEMS) device by a silicon-on-insulator (SOI) substrate. The method comprises the following steps of 1, photoetching and defining a MEMS device structure zone on a SOI substrate, and etching device layer monocrystalline silicon and buried oxide layer silicon oxide on the substrate surface, wherein the buried oxide layer is used as a first sacrificial layer, 2, depositing silicon oxide to obtain a silicon oxide layer as a second sacrificial layer, 3, photoetching and defining a silicon oxide zone according to the MEMS device structure and carrying out silicon oxide etching, 4, carrying out photoetching, wherein silicon oxide and a photoresist are used as two-layer mask etching isolation grooves, 5, removing the photoresist and etching a convex point groove and an anchor point groove by silicon oxide as mask, 6, depositing a second structure layer and carrying out etching to form a MEMS device structure, 7, manufacturing a through hole and a lead wire and 8, carrying out cold trap release. The method utilizes monocrystalline silicon as a main structural layer, prevents structure layer adhesion by pre-stress and convex points, has low technical difficulty and a high yield and can be widely used for manufacture of the MEMS device.
Description
technical field [0001] The invention belongs to the field of micro-electro-mechanical system (MEMS) processing technology, is particularly applied in the field of MEMS surface sacrificial layer technology, and relates to a method for making a MEMS surface sacrificial layer by using SOI sheets. Background technique [0002] Since the 1990s, microelectromechanical systems (MEMS) technology has entered a stage of rapid development, not only because of the novel concept, but also because MEMS devices have the prospect of miniaturization, integration and better performance compared with traditional devices. In the conventional surface sacrificial layer process, the structural layer is fabricated by deposition. Due to the difference between the substrate material and the structural layer material, substrate / structural layer mismatch may be introduced, and it is often necessary to set anchor points at very close distances, which limits the design of anchor points and even structure...
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IPC IPC(8): B81C1/00
Inventor 赵丹淇张大成何军黄贤杨芳田大宇刘鹏王玮李婷罗葵
Owner PEKING UNIV