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Device for measuring a temperature of a power semiconductor

A technology for power semiconductors and equipment, which is applied in the field of equipment for measuring the temperature of power semiconductors, and can solve the problems that temperature fluctuations cannot be solved.

Inactive Publication Date: 2014-09-03
ECPE ENG CENT FOR POWER ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, temperature fluctuations caused by the high time constant of the IR sensor compared to the IR camera cannot be resolved

Method used

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  • Device for measuring a temperature of a power semiconductor
  • Device for measuring a temperature of a power semiconductor
  • Device for measuring a temperature of a power semiconductor

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Embodiment Construction

[0016] In the following description of the embodiments of the present invention, the same elements or equivalent elements in the figures are provided with the same reference numerals in the figures, such that they are mutually interchangeable in the description of different embodiments.

[0017] figure 1 A block circuit diagram of a device 100 for measuring the temperature of a power semiconductor 102 according to an embodiment of the invention is shown. The device 100 comprises: means 104 for applying an alternating voltage to the power semiconductor 102; and means 106 for measuring the impedance between the control terminal 108 of the power semiconductor 102 and the channel terminal 110 of the power semiconductor 102, which impedance depends on the integration Temperature dependent control resistor 112 in power semiconductor 102 .

[0018] In an embodiment, an AC voltage is applied to the power semiconductor 102 and the impedance between the control terminal 108 of the powe...

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Abstract

Embodiments of the invention relate to a device for measuring a temperature of a power semiconductor, comprising a device for applying an alternating voltage to the power semiconductor and comprising a device for measuring an impedance between the control connection of the power semiconductor and the channel connection of the power semiconductor. The impedance is dependent on a temperature-dependent control resistor integrated into the power semiconductor.

Description

technical field [0001] Embodiments of the invention relate to a device for measuring the temperature of a power semiconductor. Other embodiments of the invention relate to measuring the barrier temperature of a power semiconductor using the temperature dependence of a series resistor integrated in the semiconductor chip. Background technique [0002] In "Time Resolved In Situ Tvj Measurements of 6.5kV IGBTs during Inverter Operation" by Waleri Berkel, Thomas Duetermeyer, Gunnar Puk and Oliver Schilling, 6.5kV IGBTs (insulated gate bipolar The four methods for the barrier temperature of transistors) are compared with each other and will be briefly described below. [0003] The first of four known methods involves the use of an IR (infrared) camera to detect electromagnetic radiation emanating from the surface of the IGBT. Using Planck's radiation law, the surface temperature of the IGBT can be determined from the intensity of the emitted electromagnetic radiation. However,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/01
CPCG01K7/01
Inventor 埃卡特·赫内托马斯·鲍曼奥列格·蔡特
Owner ECPE ENG CENT FOR POWER ELECTRONICS