Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Laser Marking Method for Enhanced Scanning Recognition Rate on Silver Surface

A laser marking method and surface enhancement technology, applied in the field of laser marking, can solve the problems of large loss and high price, and achieve the effect of improving the degree of diffuse reflection, the edge of the mark is clear, and the scanning recognition rate is enhanced.

Inactive Publication Date: 2016-03-30
湖南东谷云商集团有限公司
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silver is a precious metal and is expensive. Once it is counterfeited, no matter whether it is a consumer, a manufacturer or a seller, the loss will be great.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The laser is a semiconductor laser marking machine.

[0038] The laser marking method for enhancing the scanning recognition rate on the silver surface of the present embodiment comprises the following steps: first, the silver product is fixed on the station of the semiconductor laser marking machine, and then the parameters of the semiconductor laser marking machine are set as follows:

[0039] Focal length: 160MM

[0040] Pulse width: 8us

[0041] Pulse frequency: 6KHz

[0042] Laser current: 10.4A

[0043] Laser frequency: 5KHz

[0044] Moving speed: 150mm / s

[0045] Whether to fill: fill

[0046] Filling angle: 75°

[0047] Fill Line Distribution: Evenly distributed

[0048] Whether to reverse: reverse

[0049] Distance from each side: 1mm;

[0050]After completing the first marking, modify the marking machine parameters as follows:

[0051] Laser current: 10.4A

[0052] Laser frequency: 12KHz

[0053] Moving speed: 300mm / s

[0054] Whether to fill: fil...

Embodiment 2

[0062] The laser marking method for enhancing the scanning recognition rate on the silver surface of the present embodiment comprises the following steps: first, the silver product is fixed on the station of the semiconductor laser marking machine, and then the parameters of the semiconductor laser marking machine are set as follows:

[0063] Focal length: 160MM

[0064] Pulse width: 5us

[0065] Pulse frequency: 4KHz

[0066] Laser current: 10A

[0067] Laser frequency: 4KHz

[0068] Moving speed: 180mm / s

[0069] Whether to fill: fill

[0070] Filling angle: 75°

[0071] Fill Line Distribution: Evenly distributed

[0072] Whether to reverse: reverse

[0073] Distance from each side: 1mm;

[0074] After completing the first marking, modify the marking machine parameters as follows:

[0075] Laser current: 10A

[0076] Laser frequency: 10KHz

[0077] Moving speed: 450mm / s

[0078] Whether to fill: fill

[0079] Filling angle: 75°

[0080] Fill Line Distribution: ...

Embodiment 3

[0086] The laser marking method for enhancing the scanning recognition rate on the silver surface of the present embodiment comprises the following steps: first, the silver product is fixed on the station of the semiconductor laser marking machine, and then the parameters of the semiconductor laser marking machine are set as follows:

[0087] Focal length: 160MM

[0088] Pulse width: 4us

[0089] Pulse frequency: 6KHz

[0090] Laser current: 9.4A

[0091] Laser frequency: 2KHz

[0092] Moving speed: 250mm / s

[0093] Whether to fill: fill

[0094] Filling angle: 75°

[0095] Fill Line Distribution: Evenly distributed

[0096] Whether to reverse: reverse

[0097] Distance from each side: 1mm;

[0098] After completing the first marking, modify the marking machine parameters as follows:

[0099] Laser current: 9.4A

[0100] Laser frequency: 8KHz

[0101] Moving speed: 600mm / s

[0102] Whether to fill: fill

[0103] Filling angle: 75°

[0104] Fill Line Distribution:...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a laser marking method for enhancing the scanning recognition rate on the silver surface, comprising the following steps: the first step is to set the parameters of the semiconductor laser marking machine, and then perform the first marking on the polished silver product; the second The first step is to modify the parameters of the laser marking machine and perform the second marking. The laser marking method for enhancing the scanning recognition rate on the silver surface according to the present invention undergoes two or more times of superimposed laser etching with different powers, different frequencies, and different speeds, and the distribution density of irregular grooves in the marked line segment is greatly increased. , reaching more than 70 / MM, grooves and grooves overlap and intersect, which greatly improves the degree of diffuse reflection, and the edge of the mark is clearer, which makes the reflected light of the marked area and the non-marked area form a strong edge contrast, thereby enhancing the Scanning recognition rate of silver surface.

Description

technical field [0001] The invention relates to the technical field of laser marking, in particular to a laser marking method for enhancing the scanning recognition rate on a silver surface. Background technique [0002] Laser is a light source that uses stimulated radiation (energy level transition), has high brightness, high energy, monochromatic, unidirectional, single phase and other frequency and direction performance indicators are very excellent. Compared with ordinary light sources, first, its directional illuminance is tens of millions of times stronger than ordinary light sources; second, the energy is highly concentrated and can act on a tiny point. The light wave is absorbed by the material to generate instantaneous high pressure and high temperature, and the temperature can be as high as tens of thousands to several The high temperature of millions of degrees; the third is that the wavelength is limited to less than one ten-thousandth of a nanometer, and the mon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B23K26/36
CPCB41J2/442B41J3/413B41M5/24B41M5/262
Inventor 梅照付梅照丰康钰梅照涛毛学辉
Owner 湖南东谷云商集团有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com