Method and device for rapidly measuring electrical parameter temperature variation coefficient of semiconductor device
A technology of electrical parameters and coefficient of variation, applied in the direction of single semiconductor device testing, etc., can solve the problems of low measurement efficiency, unfavorable fast measurement, long measurement time, etc.
Active Publication Date: 2014-10-01
BEIJING UNIV OF TECH
View PDF4 Cites 6 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Its characteristic is that the measurement time is long. Usually, after the temperature reaches the set value, it still needs to be kept constant for 10 to 15 minutes. Measuring a device requires at least 3 temperature points, which takes about 50 minutes in total. The measurement efficiency is low, which is not conducive to rapid measurement needs
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0058] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
[0059] The Schottky silicon carbide diode SDP06S60 produced by Infineon was selected as the semiconductor device 300 to be tested, and its temperature coefficient was tested using this patent. The temperature-sensitive parameter of the device is the forward junction voltage.
[0060] The main body of the device includes: a temperature coefficient tester 100, a temperature controller 200 and a semiconductor device under test 300;
[0061] Above-mentioned temperature coefficient tester 100 is made up of computer 101, acquisition card 103 and test current source 102, provides test current for above-mentioned semiconductor device 300 under test, ambient temperature value and forward junction voltage are collected by acquisition card 103;
[0062] The temperature controller 200 is composed of a semiconductor cooling chip 204, a cooling chip drive co...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method and device for rapidly measuring an electrical parameter temperature variation coefficient of a semiconductor device, and belongs to the technical field of electrical and thermal semiconductor device measurement. The method comprises the steps that the environment temperature of the semiconductor device is rapidly increased and rapidly and linearly increased with the passage of time; the linearly-increased environment temperature and device temperature-sensitive parameter value variations with the passage of time are collected at the same time; the variation coefficient of temperature-sensitive parameters along with the temperature can be obtained when the linear variation rate and the variation rate of the temperature-sensitive parameters along with the temperature are measured. The device comprises a temperature coefficient testing instrument, a temperature control platform and the tested semiconductor device. According to the method and device for rapidly measuring the electrical parameter temperature variation coefficient of the semiconductor device, the temperature coefficient of the semiconductor device is measured by the adoption of a dynamic method, and the environment temperature is varied and the corresponding temperature-sensitive parameters are collected at the same time. The method is high in measurement speed and precision and good in repeatability, and the measuring efficiency of the thermal performance of the semiconductor device is greatly improved.
Description
Technical field: [0001] The invention belongs to the technical field of electrical and thermal measurement of semiconductor devices. In particular, it relates to a method and a device for quickly measuring the temperature variation coefficient of an electrical parameter of a semiconductor device, so as to realize rapid and accurate measurement of the temperature coefficient of the semiconductor device. Background technique: [0002] As the integration of electronic equipment components continues to increase, the heat flux increases rapidly, and the performance of semiconductor devices is greatly affected by the junction temperature. The temperature rise effect of the device will reduce the working efficiency of the system, shorten the lifetime and affect many key parameters of the device. Therefore, it is very necessary to quickly and accurately measure the junction temperature and thermal resistance of semiconductor devices. Among various measurement techniques, the elect...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 冯士维史冬杨军伟柴伟
Owner BEIJING UNIV OF TECH