A kind of Gan-based blue-green laser diode device and manufacturing method

Abstract

The invention relates to a GaN-based blue-green laser diode device, which includes a second substrate, a GaN-based epitaxial layer and an N electrode arranged from bottom to top, and periodic ridge waveguide strips on the P-type surface of the GaN-based epitaxial layer A P electrode is provided on the surface of the ridge waveguide strip structure, the width of the P electrode is smaller than the width of the surface of the ridge waveguide strip structure, and the P electrode is also in the shape of a ridge waveguide strip, and the P electrode includes The bottom surface and the inclined stepped side, the bottom surface of the P electrode is connected to the second substrate, and the inclined stepped side of the P electrode is connected to the second substrate through a welding layer. The present invention also relates to a manufacturing method of the above-mentioned GaN-based blue-green laser diode device. Compared with the existing non-conductive substrate laser diode planar electrode structure, the invention adopts the LED chip replacement process technology to prepare the laser diode with the flip-chip substrate structure of the upper and lower electrodes.

Description

technical field [0001] The invention relates to a GaN-based blue-green laser diode device and a manufacturing method, and belongs to the technical field of preparing laser diodes by using non-homogeneous substrate epitaxial films. Background technique [0002] As a compound semiconductor material, GaN material has excellent properties that many silicon-based semiconductor materials do not have, including being able to meet the working requirements of high-power, high-temperature, high-frequency and high-speed semiconductor devices. Among them, the most important physical feature that distinguishes GaN from the first and second-generation semiconductor materials is that it has a wider forbidden band and can emit blue-green light with a shorter wavelength than red light. [0003] The commercial application research of GaN semiconductor materials began in 1970, and its unique property of being able to excite blue light under high frequency and high temperature conditions has at...

AI Technical Summary

Problems solved by technology

[0011] To sum up, the existing epitaxial growth technology, heteroepitaxial laser diode structure, especially the planar electrode structure LD of non-conductive substrates such as sapphire, SiC, Si, etc., all have different degrees of difficulty in process realization and poor heat dissipation of the device. technical shortcomings

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