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A monolithic integrated UV receiver front-end amplifier circuit based on 4h-sic substrate

A receiver front-end and amplifying circuit technology, applied in the electrical field, can solve the problems of poor input capacitance suppression, large chip area, increased circuit signal delay, etc., to achieve the effects of wide bandwidth, low circuit noise, and expanded circuit bandwidth

Active Publication Date: 2020-05-12
西安电子科技大学重庆集成电路创新研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods have some disadvantages. For example, the use of inductance peaking technology will make the chip area larger, and the introduction of inductance will increase the delay of the circuit signal. In addition, the inductance peaking technology is not suitable for integration
Common source level input can improve the noise performance and linearity of the circuit, but it has poor suppression effect on the influence of input capacitance

Method used

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  • A monolithic integrated UV receiver front-end amplifier circuit based on 4h-sic substrate
  • A monolithic integrated UV receiver front-end amplifier circuit based on 4h-sic substrate
  • A monolithic integrated UV receiver front-end amplifier circuit based on 4h-sic substrate

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Embodiment Construction

[0035] The present invention will be specifically introduced below in conjunction with the accompanying drawings and specific embodiments.

[0036] refer to figure 1 with figure 2 , the monolithic integrated ultraviolet light receiver front-end amplifying circuit based on 4H-SiC substrate of the present invention comprises: ultraviolet detector U 1 , RGC input circuit, voltage gain circuit and output circuit, and the ultraviolet detector U 1 , RGC input circuit, voltage gain circuit and output circuit are all integrated on the 4H-SiC substrate. in:

[0037] 1. Ultraviolet detector U 1 It is used to convert the received ultraviolet light signal into a current signal, its anode is connected to the input terminal of the RGC input circuit, and its cathode is connected to the DC voltage source V 2 the positive connection of V 2 The negative pole of the UV detector U1 is grounded, and a resistor R is connected in parallel with both ends of the ultraviolet detector U1 g , resis...

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Abstract

The invention discloses a front end amplifying circuit based on a 4H-SiC substrate for a monolithically integrated ultraviolet light receiver. The front end amplifying circuit is characterized by comprising an ultraviolet detector, an RGC input circuit, a voltage gain circuit and an output circuit which are connected in series and are integrated on the 4H-SiC substrate, wherein the RGC input circuit is designed by a 4H-SiC MESFET device, and the feedback is formed by a common grid stage amplifying circuit and a common source stage amplifying circuit in a cascade manner; the front end amplifying circuit also comprises a negative feedback circuit of which both terminals are respectively connected with the input terminal of the voltage gain circuit and the output terminal of the output circuit. The front end amplifying circuit has the beneficial effects that the dominant pole of the circuit is effectively transferred by the RGC input circuit, the voltage gain circuit and the output circuit, and the bandwidth of the circuit is expanded; based on the 4H-SiC substrate, the front end amplifying circuit has the advantages of high temperature resistance, high power resistance and radiation resistance. Besides, the monolithically integrated ultraviolet light receiver can be operated in severe environments where other receivers are inadaptable; the circuit has wider bandwidth and low circuit noise, so that the monolithically integrated ultraviolet light receiver is suitable for ultraviolet light communication, and can be applied to the fields of satellite detection and the like.

Description

technical field [0001] The invention relates to a front-end amplifier circuit of an ultraviolet receiver, in particular to a single-chip integrated ultraviolet receiver front-end amplifier circuit based on a 4H-SiC substrate, which belongs to the field of electrical technology. Background technique [0002] With the continuous development of the information industry, the optical communication network is becoming more and more important. Relying on large transmission capacity and increasing speed, people are increasingly favoring light as a carrier for information dissemination. An optoelectronic integrated circuit that integrates photonic devices and electronic devices on one substrate was also born. Optoelectronic integrated circuits have the advantages of small size, light weight, low noise, high reliability, and low integrated inductance and capacitance, making them more and more popular in the fields of telecommunication systems, computer systems, military systems, and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/26
Inventor 张军琴崔瑜强李娅妮
Owner 西安电子科技大学重庆集成电路创新研究院