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Image sensor having metal contact coupled through a contact etch stop layer with an isolation region

An image sensor, etching stop layer technology, applied in the field of imaging, can solve the problem of blurred image, signal-to-noise ratio, blur, etc.

Active Publication Date: 2014-10-15
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Preservation of phantom images represents noise that obscures subsequently acquired images and reduces the signal-to-noise ratio, and can cause blurring in the presence of motion being imaged

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  • Image sensor having metal contact coupled through a contact etch stop layer with an isolation region
  • Image sensor having metal contact coupled through a contact etch stop layer with an isolation region
  • Image sensor having metal contact coupled through a contact etch stop layer with an isolation region

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Embodiment Construction

[0013] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be understood by one of ordinary skill in the art that the specific details need not be employed to practice the invention. In other instances, well-known materials or methods have not been described in detail so as not to obscure the present invention.

[0014] Reference throughout this specification to "one embodiment," "an embodiment," "an example," or "an example" means that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in at least one aspect of the present invention. Examples. Thus, appearances of the phrases "in one embodiment," "in an embodiment," "an example," or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, struct...

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Abstract

The invention relates to an image sensor having metal contact coupled through a contact etch stop layer with an isolation region. An image sensor pixel includes one or more photodiodes (PD) disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled to the pixel circuitry from the one or more photodiodes.

Description

technical field [0001] The present invention generally relates to imaging. More particularly, examples of the invention relate to complementary metal oxide semiconductor based image sensors. Background technique [0002] The electrical signature of an image with a high brightness level falling onto a complementary metal-oxide-semiconductor (CMOS) image sensor can remain embedded in the electrical signature of a subsequent readout of a subsequently acquired image. The electrical signature of a previously sensed image kept in an image sensor has been referred to as "phantom artifact" or "memory effect". This unwanted effect can be exacerbated by repeated exposure of static images, especially images of high intensity or brightness, to the image sensor. Preservation of ghost images represents noise that obscures subsequently acquired images and reduces the signal-to-noise ratio, and can cause blurring in the presence of motion being imaged. [0003] The memory effect problem ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1463H01L27/14636H01L27/14643
Inventor 胡信中杨大江奥拉伊·奥尔昆·赛莱克戴幸志陈刚
Owner OMNIVISION TECH INC