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Method for testing the endurance parameters of rram memory

A memory and durability technology, applied in static memory, instruments, etc., can solve the problems of wasting time and manpower, unable to automatically judge the current state of RRAM devices, etc., and achieve the effect of accelerating acquisition

Active Publication Date: 2017-10-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

because figure 2 When the advanced semiconductor parameter analyzer tests the endurance parameters of RRAM memory, it cannot automatically judge the current state of the RRAM device, and the operator needs to observe the manual operation. The statistical test requires a large amount of data, so the test statistical process wastes a lot of time and manpower.

Method used

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  • Method for testing the endurance parameters of rram memory
  • Method for testing the endurance parameters of rram memory
  • Method for testing the endurance parameters of rram memory

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Embodiment Construction

[0022] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0023] Such as image 3 as shown, image 3 It is a flow chart of the method provided by the present invention for testing the durability parameters of RRAM memory, the method comprising the following steps:

[0024] Step 1: Determine the current state of the RRAM memory to determine whether the initial pulse loaded to the RRAM memory is a programming pulse or an erase pulse. If the current state of the RRAM memory is a high-impedance state, then start to load the RRAM memory The pulse of the RRAM memory is a programming pulse; if the current state of the RRAM memory is a low-impedance state, the initial pulse loaded to the RRAM memory is an erase pulse; where the current state of the RRAM memory is judged by loading the ...

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Abstract

The invention discloses a method for testing durability parameters of an RRAM memory. The method includes: judging the current state of the RRAM memory to determine whether the initial pulse loaded to the RRAM memory is a programming pulse or an erasing pulse; Load programming pulse and erasing pulse to RRAM memory, and after loading 10^Ln times programming pulse and erasing pulse to RRAM memory, test whether the state of RRAM memory fails, when RRAM memory fails, record the last failure of RRAM device Loading programming pulses and erasing pulses for 10^Ln times results in an endurance parameter of 10^Ln-1 times, where Ln=n-1, and n is a natural number. The invention greatly speeds up the acquisition of durability parameters of the device to be tested.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory testing, in particular to a method for testing durability parameters of RRAM memory. Background technique [0002] Candidates for the next-generation memory must have the following characteristics: good scalability, high storage density, low power consumption, fast read and write speed, strong tolerance to repeated operations, long data retention time, and compatibility with CMOS processes. Resistive memory, that is, a memory that can switch between two resistive states, is a memory with potential application prospects in the next generation of non-volatile memory. However, one of the most important challenges faced in practical applications is the fluctuation of its transformation parameters. Well controlling the changes of these parameters can reduce the fluctuation of the resistive switching device and improve the reliability of the device. Memory pulse parameters mainly include ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/56
Inventor 龙世兵王国明张美芸李阳许晓欣刘红涛吕杭炳刘琦刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI