Data reading method, control circuit, memory module, and memory device of memory

Abstract

The invention provides a data reading method, a control circuit, a memory module, and a memory device of memory, wherein the data reading method, the control circuit, the memory module, and the memory device of memory can be applied to a rewritable nonvolatile memory module. The method comprises a step of determining a corresponding read voltage according to the critical voltage distribution of a memory element of a word line. The method also comprises the following steps: if the critical voltage distributions of a plurality of memory elements are all right deviation distribution, applying right adjusting voltage group of the read voltage to the word line to read a plurality of bit data as the corresponding soft values; and obtaining the page data in the plurality of memory elements through the soft values corresponding to coding; wherein the right adjusting voltage group comprises a plurality of positive adjusting read voltage and a plurality of negative adjusting read voltage, and the number of the positive adjusting read voltage is more than that of the negative adjusting read voltage. Through the technical scheme mentioned above, the method can correctly recognize the storage state of the memory elements.

Description

technical field [0001] The invention relates to a data reading method, a control circuit, a memory module and a memory storage device. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Because rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is most suitable for portable electronic products, such as laptop. A solid state drive is a storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] figure 1 is a schematic diagram of a flash memory element shown according to the prior art. [0004] Please refer to figure 1 , the flash memory element 1 includes a charge trapping layer ...

AI Technical Summary

Problems solved by technology

[0005] During the writing and erasing process, the flash memory device 1 will wear out due to the repeated injection and removal of electrons, which will increase the writing speed of electrons and cause the threshold voltage distribution to widen

Therefore, after multiple times of writing and erasing, the flash memory device 1 may not be able to correctly identify its storage state, resulting in erroneous bits.

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