Data reading method, control circuit, memory module and memory storage device

Abstract

The invention provides a data reading method, a control circuit, a memory module and a memory storage device for a rewritable non-volatile memory module. The method includes: determining the corresponding read voltage according to the threshold voltage distribution of the storage elements on a word line. The method also includes: if the critical voltage distribution of the plurality of memory elements is a right-shifted distribution, applying a right-adjusted read voltage group corresponding to the read voltage to the word line to read a plurality of bit data as corresponding soft values ; and decoding corresponding soft values ​​to obtain page data stored in the plurality of storage elements. Here, the right adjusted read voltage group includes a plurality of positive adjusted read voltages and a plurality of negative adjusted read voltages, and the number of positive adjusted read voltages is greater than the number of negative adjusted read voltages. Based on this, the method can correctly identify the storage state of the storage element.

Description

technical field [0001] The invention relates to a data reading method, a control circuit, a memory module and a memory storage device. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Because rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is most suitable for portable electronic products, such as laptop. A solid state drive is a storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] figure 1 is a schematic diagram of a flash memory element shown according to the prior art. [0004] Please refer to figure 1 , the flash memory element 1 includes a charge trapping layer ...

AI Technical Summary

Problems solved by technology

[0005] During the writing and erasing process, the flash memory device 1 will wear out due to the repeated injection and removal of electrons, which will increase the writing speed of electrons and cause the threshold voltage distribution to widen

Therefore, after multiple times of writing and erasing, the flash memory device 1 may not be able to correctly identify its storage state, resulting in erroneous bits.

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