Measuring circuit for breakover voltage drop of semiconductor switch device

Abstract

The invention provides a measuring circuit for a breakover voltage drop of a semiconductor switch device. The measuring circuit comprises a voltage input module, an inversion module and a testing module, wherein the voltage input module is used for providing input voltage, the inversion module is connected to the voltage input module in parallel, and the testing module is used for sampling the input voltage to obtain sampling voltage and carrying out the subtraction operation on the sampling voltage and output voltage of the inversion module to obtain the breakover voltage drop of the semiconductor switch device in the inversion module. The invention relates to a real-time on-line testing method, and changes of the breakover voltage drop caused by changes of junction temperature and collector electrode currents can be reflected more accurately in time; electric isolation is achieved based on the Hall effect, so that safety of the circuit is greatly improved; in addition, the circuit is simple in structure, the breakover voltage of the semiconductor switch device is calculated by measuring the difference of the direct-current bus voltage and the output voltage, the dynamic range of signals to be detected is greatly narrowed, and therefore the measurement accuracy is improved.

Description

technical field [0001] The invention relates to the field of power electronic control, in particular to a measurement circuit for conducting voltage drop of a semiconductor switching device. Background technique [0002] Semiconductor switching devices are small in size, light in weight, low in power consumption, long in life, and high in reliability. They are widely used in power supplies, motor control, inverters, and other fields. Their performance determines the quality of the product. The conduction voltage drop is one of the important parameters of the semiconductor switching device, which is directly related to the output power and output current capability of the device. The smaller the conduction voltage drop of the semiconductor switching device, the greater the on-state current it can withstand. In addition, the conduction voltage drop of the semiconductor switching device is also related to the temperature rise of the device and its own power consumption. The lar...

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Problems solved by technology

[0009] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a measurement circuit for the conduction voltage drop of a semiconductor switching device, which is used to solve the problem of low accuracy of the measurement circuit for the conduction voltage drop of a semiconductor switching device in the prior art, Problems such as slow response speed, complex circuit, poor anti-interference ability, and large dynamic range of the signal to be tested

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