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Magnetoresistive random access memory structure and method of forming the same

A random access memory, magnetoresistive technology, used in static memory, digital memory information, magnetic field controlled resistors, etc.

Inactive Publication Date: 2015-01-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Despite the attractive properties described above, there are a number of challenges associated with developing MRAM

Method used

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  • Magnetoresistive random access memory structure and method of forming the same
  • Magnetoresistive random access memory structure and method of forming the same
  • Magnetoresistive random access memory structure and method of forming the same

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Embodiment Construction

[0048] The making and using of exemplary embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are exemplary only, and do not limit the scope of the invention.

[0049] According to one or more embodiments of the present invention, a magnetoresistive random access memory (MRAM) structure is formed. The MRAM structure includes a magnetic tunnel junction (MTJ) element. The MTJ element includes a tunnel layer formed between a ferromagnetic pinned layer and a ferromagnetic free layer. The tunneling layer is thin enough (typically a few nanometers) to allow electrons to tunnel from one ferromagnetic layer to another. The resistance of the MTJ element is tuned by changing the orientation of the magnetic moment of the ferromagnetic free layer relative to the magnetic moment of the ferromagneti...

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Abstract

A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned layer. A ferromagnetic free layer is over the tunneling layer. The ferromagnetic free layer has a first portion and a demagnetized second portion. The MRAM also includes a top electrode structure over the first portion.

Description

technical field [0001] The present invention relates generally to semiconductor structures and, more particularly, to magnetoresistive random access memory structures and methods of forming the same. Background technique [0002] Among integrated circuit (IC) devices, magnetoresistive random access memory (MRAM) is an emerging technology for the next generation of nonvolatile memory devices. MRAM is a memory structure that includes an array of MRAM cells. The data bits in each cell are read using resistance rather than electronic charge. Specifically, each MRAM cell includes a magnetic tunnel junction (MTJ) element, and the resistance of the MTJ element is adjustable to represent a logic "0" or a logic "1." The MTJ element consists of a ferromagnetic pinned layer and a ferromagnetic free layer separated by a tunnel insulating layer. The resistance of the MTJ element is tuned by changing the orientation of the magnetic moment of the ferromagnetic free layer relative to the...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/12
CPCH01L43/12H01L43/02G11C11/161H10N50/10H10N50/01G11C11/15H01L27/1222H10B61/00H10B61/22H10N50/80
Inventor 徐晨祐黄韦翰刘世昌蔡嘉雄
Owner TAIWAN SEMICON MFG CO LTD
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