Power semiconductor device and manufacturing method thereof

Abstract

A power semiconductor device and its manufacturing method. The power semiconductor device includes: a semiconductor substrate of a first doping type, with a device region on it, and a main junction region of a second doping type and several A field confining ring, the first doping type is opposite to the second doping type; wherein, a semiconductor substrate is formed between the main junction region and the first field confining ring adjacent to the main junction region The first doping region, the doping type of the first doping region is the same as that of the semiconductor substrate, and the doping concentration is higher than that of the semiconductor substrate. In the semiconductor power device, the first doped region between the main junction region and the first field limiting ring increases the surface concentration of the semiconductor substrate between the main junction region and the first field limiting ring. Due to its high electronic potential energy, it can effectively reduce the impact on the electric field caused by the field plate accumulation of mobile charges on the main junction region under high temperature and high pressure conditions.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power semiconductor device and a manufacturing method thereof. Background technique [0002] The basic requirement of modern power semiconductor devices is to be able to withstand high voltage and high current operation. Among them, the silicon-based power MOSFET usually forms a MOS power semiconductor device with a large aspect ratio by connecting a large number of MOS units in parallel to ensure that the surface voltage between the parallel MOS units in the middle of the large part is roughly the same. However, the voltage between the MOS unit at the boundary (ie terminal) and the surface of the substrate is very different, which often causes the surface electric field to be too concentrated, and due to the curvature effect of the planar junction, the junction bending part of the PN junction at the boundary and the electric field at the surface Increase, causing the e...

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Problems solved by technology

[0009] Based on this, it is necessary to provide a new solution to the phenomenon that the leakage current of the devices of the existing planar terminal technology is too large or even continuously increases and cannot be stabilized under high temperature conditions, and the breakdown voltage decreases or even short circuit occurs after returning to normal temperature.

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