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Junctionless Insulated Gate Current Limiter Device

A current limiting and electrode technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of increasing specifications

Active Publication Date: 2019-10-01
FAIRCHILD SEMICON CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the dimensions of other components included in the integrated circuit may have to be increased to compensate for the inadequacy of the protection device in responding to certain types of adverse power conditions

Method used

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  • Junctionless Insulated Gate Current Limiter Device
  • Junctionless Insulated Gate Current Limiter Device
  • Junctionless Insulated Gate Current Limiter Device

Examples

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Embodiment Construction

[0024] Figure 1A is a cross-sectional view of the current limiter 100 . In some implementations, the current limiter 100 may be referred to as a junctionless current limiter. The current limiter 100 may be referred to as a junctionless current limiter because the current limiter does not have or include a junction of two different conductivity type materials, such as a PN junction including a P-type conductivity material and an N-type conductivity material. Figure 1B for along Figure 1A The cross-sectional view taken along the line A1. In some implementations, the primary conduction path from drain to source can be a junction-free, saturated conduction path (described in more detail below).

[0025] Current limiter 100 is configured to provide power protection to a load (not shown) during one or more adverse power conditions. In some embodiments, adverse power conditions (which may include overvoltage conditions and / or overcurrent conditions), such as voltage spikes (rela...

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Abstract

The invention relates to a junctionless insulated gate current limiter device. In one general aspect, an apparatus can include a semiconductor substrate, and a trench defined within the semiconductor substrate and having a depth aligned along a vertical axis, a length aligned along a longitudinal axis, and a width aligned along a horizontal axis. The device includes a dielectric disposed within the trench, and an electrode disposed within the dielectric and insulated from the semiconductor substrate by the dielectric. The semiconductor substrate may have a portion vertically aligned and adjacent to the trench, and the portion of the semiconductor substrate may have a conductivity type that is continuous along an entire depth of the trench. Bias the device in a normally on state.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit and priority of Provisional Application No. 61 / 864,271, filed August 9, 2103, and Provisional Application No. 61 / 949,053, filed March 6, 2014. technical field [0003] This description relates to devices and methods including current limiters. Background technique [0004] Protection devices can be used to protect integrated circuits (eg, downstream integrated circuits) from adverse power supply conditions (eg, overvoltage conditions, overcurrent conditions). However, the protection device may not be configured to provide protection in response to each of various adverse power supply conditions that may occur, such as a current surge at start-up, a current surge, and / or the like. Accordingly, protection devices selected for power supply protection may not provide adequate protection of integrated circuits or related components in the desired manner. In addition, the dimensions of o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/08
Inventor 提尔塔伊约蒂·萨卡尔阿德里安·米科拉杰克扎克何宜修阿肖克·沙拉
Owner FAIRCHILD SEMICON CORP
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