Synchrotron-radiation high-pressure monocrystalline diffraction method

Abstract

A disclosed synchrotron-radiation high-pressure monocrystalline diffraction method comprises limiting and intensity monitoring of incident light, sample positioning and rotation, data acquisition by using a two-dimension detector, indexing of detection data, diffraction intensity correction, and other steps. The experiment method is capable of obtaining accurate strength information of a monocrystalline sample under a pressure condition, and provides good conditions for subsequent research works such as structure determination and refining, high-pressure phase transition research, commensurability-free structure determination, charge density measure and the like.

Description

technical field [0001] The present invention relates to a single crystal diffraction experiment method, in particular to a synchrotron radiation high-pressure single crystal diffraction method. The method is based on a synchrotron radiation experiment platform, and uses the diamond-to-anvil pressure chamber technology to complete single crystal sample diffraction data collection and post-processing. Experimental method of treatment. Background technique [0002] At present, the most commonly used experimental method for determining the crystal structure under high pressure is the X-ray diffraction method. The X-ray diffraction signal of the sample contains two aspects of information, diffraction peak information and diffraction intensity information. The former is mainly determined by the unit cell parameters and space group types, while the latter is mainly determined by the chemical composition and atomic arrangement (crystal structure) of the crystal. At present, most X...

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Problems solved by technology

[0004] In China, no synchrotron radiation high-pressure single crystal diffraction experiment has been carried out before, mainly because compared with powder diffraction, the system composition is more complicated and the sample positioning accuracy is higher.