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Solid-state imaging device

A technology for solid-state imaging devices and semiconductors, which can be applied to electric solid-state devices, radiation control devices, semiconductor devices, etc., and can solve problems such as difficulty in further improving spectroscopic characteristics.

Inactive Publication Date: 2015-02-25
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the spectral characteristics of each pixel of a solid-state imaging device having a plurality of color filters formed in this way are limited by the types of pigments or dyes contained in the transparent resin, and it is difficult to further improve the spectral characteristics.

Method used

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Examples

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Embodiment Construction

[0027] More embodiments will be described below with reference to the drawings. In the drawings, the same symbols represent the same or similar parts.

[0028] refer to figure 1 The first embodiment will be described. figure 1 It is a plan view schematically showing the solid-state imaging device of the first embodiment. Such as figure 1 As shown, the solid-state imaging device 10 of the first embodiment is formed by arranging a plurality of pixels 11B, 11G, and 11R in a grid pattern. The plurality of pixels 11B have blue color filters 12B. The plurality of pixels 11G have a green color filter 12G. The plurality of pixels 11R have red color filters 13R.

[0029] In the plurality of pixels 11B, 11G, and 11R, the blue color filter portion 12B, the green color filter portion 12G, and the red color filter portion 12R are arranged in a Bayer arrangement. exist figure 1 In , microlenses described later are omitted.

[0030] figure 2 is along the solid-state imaging device...

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Abstract

According to one embodiment, a solid-state imaging device including a semiconductor substrate having a light receiving portion, a color filter layer and a selective reflection layer. The color filter layer includes a color filter portion and is provided above a first main surface of the semiconductor substrate. The color filter portion has a transmission band for transmitting light of a predetermined wavelength band and absorbs light outside the transmission band. The selective reflection layer is provided between the first main surface of the semiconductor substrate and the color filter layer so as to contact with the color filter portion. The selective reflection layer has substantially the same refraction index as the color filter portion with respect to light within the transmission band. The refraction index of the selective reflection layer is substantially different from that of the color filter portion with respect to light outside the transmission band.

Description

[0001] CITATION TO RELATED APPLICATIONS: This application is based upon and claims the benefit of priority from earlier Japanese Patent Application No. 2013-167581 filed on Aug. 12, 2013, the entire contents of which are hereby incorporated by reference. technical field [0002] The embodiments described here generally relate to solid-state imaging devices. Background technique [0003] In a conventional solid-state imaging device used in a CMOS image sensor or the like, a plurality of pixels each having a light-receiving portion for receiving light and a microlens for condensing light to the light-receiving portion are arranged in a planar manner. [0004] In a solid-state imaging device that captures a color image, a color filter layer including a plurality of color filter portions having different light transmission bands is provided between a plurality of light receiving portions and a plurality of microlenses. Each color filter can receive light of a different color for...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14625H01L27/14621
Inventor 上野宗一郎
Owner KK TOSHIBA
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