Storage failure rate detecting method and storage reliability detecting method of infrared focal plane array chip

An infrared focal plane and array chip technology, applied in the field of infrared focal plane array detectors, can solve the problem of high cost

Active Publication Date: 2015-03-11
FIFTH ELECTRONICS RES INST OF MINIST OF IND & INFORMATION TECH
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a detection method for the storage failure rate and reliability of infrared focal plane array chips for the problem of high cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Storage failure rate detecting method and storage reliability detecting method of infrared focal plane array chip
  • Storage failure rate detecting method and storage reliability detecting method of infrared focal plane array chip
  • Storage failure rate detecting method and storage reliability detecting method of infrared focal plane array chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with the embodiments and accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0024] Such as figure 1 As shown, it is a schematic flow chart of an embodiment of a detection method for the storage failure rate of an infrared focal plane array chip of the present invention, including:

[0025] Step S101: measure the number of pixels of the sample of the infrared focal plane array chip;

[0026] The samples here are samples of the same infrared focal plane array chip. The IRFPA chip is composed of many pixels. For a M×N area array chip, the chip can be regarded as a sample matrix containing M×N units. Based on the degradation characteristics of IRFPA detector materials, high temperature is a sensitive stress that causes the degradation of its detector pixels. Therefore, grouped high-temperature storage tests were carried out to evaluate its storage fai...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed is a storage failure rate detecting method and a storage reliability detecting method of infrared focal plane array chip. The storage failure rate detecting method includes measuring the number of pixels of samples of the infrared focal plane array chip; grouping the samples; measuring initial pixel effectiveness rate of each sample group before storage, storing each sample group under high-temperature storage stress, and measuring the final pixel effectiveness rate of each sample group after storage; determining pixel failure rate of the mentioned sample group under the high-temperature storage stress according to the final pixel effectiveness rate and the initial pixel effectiveness rate of the samples; calculating activated energy of storage degeneration of the samples according to the pixel failure rates and calculating acceleration coefficient under the normal-temperature storage stress according to the activated energy; calculating the upper limit of the storage failure rate of the pixels of the samples under the normal temperature and the preset signal level according to the acceleration coefficient and the number of the pixels, and determining the storage failure rate of the infrared focal plane array chip according to the upper limit of the storage failure rate. By the storage failure rate detecting method, detecting cost is reduced.

Description

technical field [0001] The invention relates to the technical field of infrared focal plane array detectors, in particular to a method for detecting storage failure rate and reliability of infrared focal plane array chips. Background technique [0002] Infrared focal plane array (IRFPA) chips are the core components of high-performance infrared systems, and play an important role in aerospace, aviation, industry and other fields. At present, it is developing in the direction of focal plane ultra-high-density integrated detector elements, high performance, high reliability, further miniaturization, and non-cooling, and is moving from the second-generation array technology to the third-generation miniaturized high-density and high-performance infrared Focal plane array technology direction development. [0003] For space or weapon applications, infrared focal plane array chips need to meet a certain storage time during ground integration or use to ensure that performance indi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/10
Inventor 杨少华王晓晗赖灿雄恩云飞黄云陈辉
Owner FIFTH ELECTRONICS RES INST OF MINIST OF IND & INFORMATION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap