NLDMOS anti-static protection tube

Abstract

The invention discloses an NLDMOS anti-static protection tube, which is characterized in that a material sheet of a P-type substrate is provided with an N-type buried layer and grows with a P-type epitaxial layer, two ends of the N-type buried layer are provided with deep N-wells respectively, a deep P-well is arranged above the N-type buried layer, six field regions are arranged above the deep N-wells and the deep P-well, intervals among the field regions are a first active region, a second active region, a third active region, a fourth active region and a fifth active region in sequence; the second active region and the fourth active region are respectively provided with shallow P-wells below, each shallow P-well is internally provided with an N+ implantation and diffusion region and a P+ implantation and diffusion region; the first active region and the fifth active region are respectively provided with the N+ implantation and diffusion regions below; and the third active region is provided with an implantation and diffusion region and a shallow N-well. The NLDMOS anti-static protection tube greatly improves the anti-static ability of a circuit, thereby improving the reliability of the circuit; and meanwhile, the technological process is not increased, and the competitiveness of integrated circuits is improved.

Description

technical field [0001] The invention relates to an antistatic protection device, in particular to an electrostatic discharge (Electro-Static Discharge, ESD) protection device specially providing effective antistatic protection for components inside an integrated circuit, and belongs to the field of semiconductor technology. Background technique [0002] The so-called electrostatic discharge (ESD) refers to the process of instantaneous transfer of current or energy when two objects with different potentials contact or approach each other due to friction, induction and other reasons. In the process of integrated circuit manufacturing, packaging, transportation, assembly, etc., it is inevitable to be affected by ESD impact, and even lead to failure. According to the report data over the years, the ESD problem has become a problem that cannot be ignored as the integrated circuit develops into an advanced technology with small line width and high integration. Usually, the impact...

AI Technical Summary

Problems solved by technology

However, when improving the current path, temperature distribution and other parameters that affect the ESD performance of the device, the breakdown voltage of the device itself will often be changed.

In order to ensure the normal operation of the circuit, the high-voltage ESD protection design generally needs to be carried out under the premise that the breakdown voltage remains unchanged, which greatly limits the content and scope of structural parameter adjustments

(2) Excessive power consumption under ESD stress causes low current discharge capability

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