Unlock instant, AI-driven research and patent intelligence for your innovation.

Inspection device and inspection method

An inspection device and inspection result technology, applied in measurement devices, instruments, opto-mechanical equipment, etc., can solve problems such as high possibility, failure to form exposure patterns normally, and failure to achieve mask clamping.

Active Publication Date: 2018-12-21
키오시아가부시키가이샤
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a high possibility of particles (particles) adhering to the back surface of the mask or the electrostatic chuck.
In addition, if the mask is held by an electrostatic chuck holding mechanism with particles attached to the back surface of the mask, flat mask clamping (clamp) cannot be achieved, and exposure patterns may not be formed normally.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inspection device and inspection method
  • Inspection device and inspection method
  • Inspection device and inspection method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0023] Figure 1A is a plan view showing an example of the electrostatic chuck holding mechanism, Figure 1B It is a side view showing an example of a state where the electrostatic chuck holding mechanism holds the mask. The electrostatic chuck holding mechanism 50 has a structure in which a conductive layer 52 is provided on one main surface of a base 51 on a flat plate. In addition, a plurality of protrusions 53 are provided on the surface of the conductive layer 52 . The base body 51 can be made of materials such as glass or ceramics with very small thermal expansion. In addition, a conductive material such as TiN or CrN can be used for the conductive layer 52 having the convex portion 53 .

[0024] The protrusions 53 are arranged two-dimensionally at a predetermined pitch on one main surface of the base 51 . The height h of the convex portion 53 is, for example, 5 to 50 μm, and the diameter of the convex portion 53 is about 1 mm. Moreover, the convex part 53 is arrange...

no. 2 Embodiment

[0045] In the second embodiment, a specific example of a method of obtaining the protrusion contact area and the protrusion non-contact area from the information obtained as a result of the back inspection of the object held by the electrostatic chuck will be described.

[0046] Figure 5 It is a block diagram schematically showing the functional configuration of the electrostatic chuck holding object inspection device according to the second embodiment. The electrostatic chuck contact position acquisition unit 13 of the electrostatic chuck holding object inspection device 10 of the first embodiment of the electrostatic chuck holding object inspection device 10A includes: a function 131 for specifying the actual contact area of ​​a convex part; a function 132 for estimating a contact area of ​​a convex part; The contact area takes function 133 .

[0047] The convex portion actual contact area specifying function 131 selects a plurality of positions estimated to be in contact ...

no. 3 Embodiment

[0066] In the second embodiment, the case where the convex contact area is obtained using the particle diagram and the inspection photograph is exemplified, but in the third embodiment, the case where the convex contact area is obtained using only the particle diagram will be described.

[0067] The electrostatic chuck holding object inspection device of the third embodiment is the same as the device described in the second embodiment. However, the inspection result information acquisition unit 12 acquires only the particle diagram from the inspection unit 11 as the inspection result information.

[0068] In addition, the function 131 for specifying the actual contact region of the convex part, in the particle map acquired by the inspection result information acquisition unit 12, calculates the regular area using the least square method or Fourier transform, for example, from the area where the particles have regular positions selected by the inspector. As for the particle pit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides an inspection device and an inspection method. The inspection device includes a contact position acquisition unit and an inspection state determination unit. The contact position obtaining unit obtains a contact position of the convex portion on the inspection surface using the inspection result of the presence or absence of particles on the inspection surface of the holding object and the coordinate information of the convex portion of the electrostatic chuck holding mechanism. The inspection state judging unit judges whether the size of the particles adhering to the contact region of the inspection surface with the convex portion is within an allowable range using a first judgment reference value, and for non-contact with the convex portion on the inspection surface. Whether or not the size of the particles attached to the contact area is within the allowable range is determined using a second criterion value larger than the above-mentioned first criterion value.

Description

technical field [0001] The invention relates to an inspection device and an inspection method. Background technique [0002] With the miniaturization of semiconductor devices, the wavelength of the light source used in the exposure device is further shortened, and the exposure device (EUV exposure device) using extreme ultraviolet light (Extreme Ultra Violet light: hereinafter referred to as EUV light) with a wavelength of about 100nm or less is gradually applied to the semiconductor device. EUV light is attenuated in the atmosphere and has a property of being difficult to pass through materials such as glass used as a mask of a conventional exposure device. Therefore, EUV exposure is generally performed in a vacuum chamber using a reflective mask provided with a multilayer film such as Mo or Si. [0003] As described above, as a mechanism for holding the mask, since EUV exposure is performed in a vacuum chamber, it is difficult to apply a method of holding the outer perip...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/84H01L21/67
CPCG01N15/0227G01N21/94G01N2015/0096G03F1/84G03F7/00
Inventor 铃木胜水野央之
Owner 키오시아가부시키가이샤