Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory device with common source line shielding circuit

A technology of common source lines and shielding circuits, applied in the field of memory devices, can solve problems such as high power and consumption

Inactive Publication Date: 2018-02-23
SONY SEMICON SOLUTIONS CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, if some cells are already in the LRS state, applying a set pulse will result in excessive power consumption for operations that only require a portion of the memory tile

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory device with common source line shielding circuit
  • Memory device with common source line shielding circuit
  • Memory device with common source line shielding circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] In order to understand the module structure of the present invention, a background art RAM module will be described for comparison purposes. figure 1 is a description of a memory device 100 according to the background art. Memory device 100 includes a plurality of memory tiles 101 1 to 101 n (where n is an integer). For example, memory tile 101 2 An array comprising m memory cells (where m is an integer), one of which is memory cell 102 . Memory cell 102 is an exemplary depiction of one of the memory cells of the memory cell array on memory tile 101 . The memory cell 102 includes a switch 104 coupled to a variable resistance material (R) 106 .

[0019] The gate of switch 104 is coupled to word line (WL) 112 . The source of switch 104 is coupled to bit line (BL) 110 . R 106 is also coupled to a common source line (CSL plate) 108 . CSL 108 is common to all memory cells within memory tile 101 , ie, all variable resistance material in each cell is coupled to CSL 108...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A memory device comprising a plurality of memory tiles, each tile comprising a local common source line (CSL) plate, a plurality of bitlines and a plurality of wordlines, each coupled to a plurality of memory cells and a masking circuit, coupled to each of the memory tiles, for controlling whether to raise the local CSL plate and the plurality of bitlines based on the a global common source line.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Patent Application No. 61 / 874,417 filed September 6, 2013, which is hereby incorporated in its entirety. technical field [0003] Certain embodiments of the present disclosure relate to memory devices. More specifically, embodiments of the present disclosure relate to memory devices having common source line shielding circuits. Background technique [0004] The growing need for high performance data storage and access in various consumer electronics and computing devices has driven the development of non-volatile memory (NVM) technology. Resistive Random Access Memory (ReRAM) is one of the alternatives to NVM used due to its low operating voltage, high speed and separable polarity. NVM is used in computers, mobile computing devices, memory cards, and the like. For more information on NVM such as ReRAM, see commonly assigned US Patent No. 6,867,996, which is hereb...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
CPCG11C8/12G11C13/0023G11C13/0026G11C13/0064G11C13/0069G11C2213/79
Inventor 北川真J·贾瓦尼法德
Owner SONY SEMICON SOLUTIONS CORP