A silicon pressure sensor temperature drift compensation circuit and circuit construction method

Abstract

The invention provides a silicon pressure sensor temperature excursion compensating circuit which is characterized in that Ra, Rb, Rc, Rd, Re, Rn and Rt are included, wherein Ra, Rb, Rc, Rd and Re are compensating resistor networks formed by one or more resistors, Rn is a single negative temperature coefficient thermistor, Rt is a single positive temperature coefficient thermistor, a voltage source input end Vcc is connected with an excitation power supply input positive end Uin of a silicon pressure sensor through Ra which is connected in series with a whole bridge of the silicon pressure sensor, Rc is connected in parallel with Rt and then is connected in series with Rb to from Rq, one end of Rq is connected with the excitation power supply input positive end Uin, the other end of Rq is connected with an output signal positive end Uo+, Rq is connected in parallel with a silicon pressure sensor bridge arm R1, Re is connected in parallel with Rn and then is connected in series with Rd to form Rp, one end of the Rp is connected with the silicon pressure sensor, the other end of Rp is connected with output signal negative end UO-, and Rp is connected in parallel with a silicon pressure sensor bridge arm R4.

Description

technical field [0001] The invention belongs to the field of fluid pressure measurement, and relates to a temperature drift compensation method of a silicon pressure sensor. Background technique [0002] Silicon pressure sensors have the characteristics of simple structure, high sensitivity, and good dynamic performance, and are widely used in pressure testing occasions. However, due to its own problems in the semiconductor process, silicon pressure sensors always have temperature drift, and the temperature drift is mainly composed of zero point temperature drift and sensitivity temperature drift. [0003] At present, the common temperature drift compensation methods of silicon pressure sensors include the use of compensation chips for compensation, the use of temperature acquisition modules and microprocessors to interpolate through algorithms, etc. Using the above compensation method, due to the reasons of the electronic components themselves, the temperature drift compen...

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Problems solved by technology

However, it is difficult to realize the temperature drift compensation of the silicon pressure sensor by using the above method in the application of a larger temperature range such as -55°C to +150°C

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