Gas supply device and method for cooling static sucker

Abstract

The invention relates to a gas supply device and method for a cooling static sucker. Reaction gas with first pressure is changed into first process gas with second pressure through a flow divider in a first gas path and the first process gas is delivered to a substrate placed on the static sucker for reaction treatment; a second branch gas path is communicated with a pipeline in front of the flow divider, a path of reaction gas is divided or the reaction gas is mixed with diluent gas so as to form second process gas with first pressure, the second process gas is delivered to the edge of the back face of the substrate through gas channels on the edge in the static sucker, helium or the second process gas is delivered to the center of the surface of the substrate through the gas channels in the center, and therefore the heat transfer cooling effect is achieved. Due to the fact that the composition of the first process gas and the composition of the second process gas are the same or are quite similar, reaction conditions needed for substrate edge treatment are fundamentally not changed when the first process gas and the second process gas are mixed; the high-pressure second process gas is large in pressure supply range, the defect that heat conduction efficiency is lower than that of helium can be effectively overcome, and the cooling effect is guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an air supply device and an air supply method for cooling an electrostatic chuck. Background technique [0002] like figure 1 Shown is a schematic structural view of a conventional vacuum processing chamber 10 . The process gas 40 enters the vacuum processing chamber 10 from the top to perform etching, film deposition or other processing on the surface of the substrate 30 . The bottom of the vacuum processing chamber 10 is provided with an electrostatic chuck 20 for fixing and supporting the substrate 30 placed on the electrostatic chuck 20 during processing. As a cooling gas, helium 60 first passes through several gas channels 50 opened in the electrostatic chuck 20, passes through the electrostatic chuck 20 from below to reach its top surface, and then flows through the gap between the back surface of the substrate 30 and the top surface of the electrostatic chuck 2...

AI Technical Summary

Problems solved by technology

However, the helium 60 leaks at the edge of the substrate 30 and mixes with the process gas 40 (reference number 70 is a gas mixing area), so that the reaction conditions at the edge of the substrate 30 are changed, resulting in the substrate 30 Inconsistent effects after the center and edge areas are made

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