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Thermal observer and overload protection for power switches

A technology of power chips and power semiconductors, applied in the field of overload protection of power semiconductor circuits or switches, and in the field of fault operation states, it can solve problems such as high power peaks, energy density dissipation, etc., achieve small area requirements, improve reliability and durability Effect

Active Publication Date: 2015-03-25
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the new generation of DMOS devices, the active area is reduced for cost reasons, and in some applications, very high power peaks and energy densities have to be dissipated by small silicon areas

Method used

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  • Thermal observer and overload protection for power switches
  • Thermal observer and overload protection for power switches
  • Thermal observer and overload protection for power switches

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Embodiment Construction

[0109] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced. Since various components of embodiments of the present invention may be positioned in a number of different orientations, their directional terminology is for purposes of illustration and not limitation. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description is not to be taken in a limiting manner, and the scope of the invention is defined by the appended claims.

[0110] Figure 1A A simplified schematic diagram of a power semiconductor circuit or trench is shown, in which the invention can be applied. exist Figure 1B , showing the following details:

[0111] T1: Power transistor of high-sid...

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PUM

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Abstract

The present invention relates to a thermal observer and an overload protection for power switches and discloses the placing of temperature sensors embedded in the power semiconductor device. In this, at least one of the embedded temperature sensors is placed within or close to the heat source, active areas or channels of the power semiconductor circuit, and at least one of the embedded temperature sensors is placed more apart from the heat source, active areas or channels of the power semiconductor circuit. Furthermore, a new the temperature measurement method is provided, with timing of the temperature measurement and adjusting measurement parameters to appropriate threshold values.

Description

technical field [0001] The invention relates to the field of semiconductor devices and to the detection and use for protection of faulty operating states leading to temperature rises, for example in the case of a short circuit situation. More particularly, the present invention relates to a thermal observation device for a power semiconductor circuit or switch and an overload protection method for a power semiconductor circuit or switch. [0002] The present invention proposes a thermal observer and overload protection for power semiconductor circuits or switches. Certain kinds of power semiconductor switches are commonly referred to as "smart switches" and may include power transistors (ie, in a high-side configuration) as well as a control chip for management. In particular, the control chip may include over-current or over-temperature detection circuits for protection against overload situations. Background technique [0003] Power semiconductor circuits or switches can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/34H01L27/02H02H7/20
CPCG01K1/026H02H3/07H02H5/04H02H6/00H03K17/0822H03K2017/0806
Inventor F·科尔蒂贾尼A·德奇科
Owner INFINEON TECH AG