Check patentability & draft patents in minutes with Patsnap Eureka AI!

Multi-gate thin-film transistor

A thin-film semiconductor and gate electrode technology, applied in the field of charge storage and transfer elements, can solve problems such as difficulties in implementation

Active Publication Date: 2015-04-08
SNAPTRACK
View PDF14 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This situation makes implementation difficult when both compact form factor and reliability are design concerns

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-gate thin-film transistor
  • Multi-gate thin-film transistor
  • Multi-gate thin-film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The disclosed implementations include examples of multi-gate thin film transistors or transistor devices / structures (both referred to hereinafter as "transistors"), including tri-gate thin film transistors (TFTs). In some implementations, a tri-gate TFT can be used to store and transfer charge to a display element, such as an LCD pixel, an IMOD pixel, another MEMS-based device, or another electrical or electromechanical element. Related equipment, systems, and manufacturing processes and techniques are also disclosed.

[0033] Particular implementations of the subject matter described in this disclosure can be implemented to realize one or more of the following potential advantages. In some implementations, the TFT includes a storage gate electrode that effectively acts as an "active MOS capacitor." In a first mode of operation, bias conditions are such that the storage gate electrode is configured to be in a high capacitance state to facilitate transfer and accumulati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

This disclosure provides implementations of multi-gate transistors, structures, devices, apparatus, systems, and related processes. In one aspect, a device includes a thin-film semiconducting layer arranged over a substrate. A drain and source are coupled to the semiconducting layer. The device also includes first, second and third gates all arranged adjacent the semiconducting layer and configured to receive first, second, and third control signals, respectively. Dielectric layers insulate the gates from the semiconducting layer and from one another. In a first mode, the first, second, and third gates are configured such that charge is stored in a potential well in a region of the semiconducting layer adjacent the second gate. In a second mode, the first, second and third gate electrodes are configured such that the stored charge is transferred through the region of the semiconducting layer adjacent the third gate electrode and through the source to a load.

Description

[0001] priority data [0002] The present invention is claimed in co-pending U.S. Patent Application No. 13 / 557,039, filed July 24, 2012, by Hong et al., entitled "MULTI-GATE THIN-FILM TRANSISTOR" (Attorney Docket No. 120304 / QUALP134), which is hereby incorporated by reference in its entirety for all purposes. technical field [0003] The present invention relates generally to charge storage and transfer elements, and more particularly to multi-gate thin film transistor structures suitable for storing and transferring charge to electrical or electromechanical components such as display elements. Background technique [0004] Electromechanical systems (EMS) include devices with electrical and mechanical components, transducers such as actuators and sensors, optical components (including mirrors), and electronics. EMS can be fabricated at a variety of scales including, but not limited to, microscale and nanoscale. For example, microelectromechanical systems (MEMS) devices c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/786
CPCH01L29/78648H01L29/78645
Inventor 约翰·贤哲·洪金天弘冯子青
Owner SNAPTRACK
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com