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A kind of dense method of film of tantalum capacitor

A tantalum capacitor and film technology, which is applied to the dense field of tantalum capacitor film, can solve the problems of uneven electrical performance parameters of tantalum capacitors, difficult to control, affecting quality and other problems, achieve good consistency, improve leakage current, and uniform density Effect

Active Publication Date: 2017-06-16
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current state of technology, it is difficult for us to control the Mn(NO 3 ) 2 In addition, there is a certain space inside the film furnace, so the temperature, water vapor pressure, wind speed, etc. at each point in the furnace space are not uniform, which greatly affects the MnO 2 The quality of the layer, the electrical performance parameters of tantalum capacitors also become uneven

Method used

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  • A kind of dense method of film of tantalum capacitor
  • A kind of dense method of film of tantalum capacitor
  • A kind of dense method of film of tantalum capacitor

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Select the tantalum powder with a CV value of 32000μFV / g, press the 10V470μF tantalum capacitor anode substrate, and sinter it into a porous anode substrate in a high vacuum at 1450℃. The sintered anode substrate is anodized in a dilute phosphoric acid aqueous solution at 40V After forming the dielectric layer, the tantalum core after the formation of the dielectric layer is repeatedly immersed in manganese nitrate solution and thermally decomposed to form a manganese dioxide cathode layer on the surface of the tantalum core. When preparing the manganese dioxide cathode layer, the compaction stage is The following steps are performed:

[0030] (1) Immerse the strengthened tantalum core with a specific gravity of 1.78g / cm 3 In the manganese nitrate solution, the immersion depth is 2 / 3 of the tantalum core, the temperature of the manganese nitrate solution is 45℃, and the immersion time is 10min.

[0031] (2) Put the tantalum core impregnated with manganese nitrate solution in...

Embodiment 2

[0039] Select the tantalum powder with a CV value of 10000μFV / g, press the tantalum capacitor anode substrate with the specification of 16V100μF, and sinter it into a porous anode substrate in a high vacuum at 1700℃. The sintered anode substrate is anodized at 64V ​​in dilute phosphoric acid aqueous solution. , The dielectric layer is formed, and then the tantalum core after the dielectric layer is repeatedly immersed in the manganese nitrate solution and thermally decomposed to form a manganese dioxide cathode layer on the surface of the tantalum core. When preparing the manganese dioxide cathode layer, the compaction stage is as follows Steps to proceed:

[0040] (1) Immerse the strengthened tantalum core with a specific gravity of 1.80g / cm 3 In the manganese nitrate solution, the immersion depth is 2 / 3 of the tantalum core, the temperature of the manganese nitrate solution is 50℃, and the immersion time is 6min.

[0041] (2) Put the tantalum core impregnated with manganese nitra...

Embodiment 3

[0049] Select the tantalum powder with a CV value of 15000μFV / g, press the 25V100μF tantalum capacitor anode substrate, and sinter the porous anode substrate at 1600℃ in high vacuum. The sintered anode substrate is anodized at 100V in a dilute phosphoric acid aqueous solution. The dielectric layer is formed, and the tantalum core after forming the dielectric layer is repeatedly immersed in manganese nitrate solution and thermally decomposed to form a manganese dioxide cathode layer on the surface of the tantalum core. When preparing the manganese dioxide cathode layer, the densification stage is as follows get on:

[0050] (1) Immerse the strengthened tantalum core with a specific gravity of 1.85g / cm 3 In the manganese nitrate solution, the immersion depth is 2 / 3 of the tantalum core, the temperature of the manganese nitrate solution is 45°C, and the immersion time is 7 minutes.

[0051] (2) Put the tantalum core impregnated with manganese nitrate solution into a metal box, and put...

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Abstract

The invention provides a compacting method for manganese dioxide layer forming of a tantalum capacitor. The method includes the following steps that (1) a tantalum block subjected to reinforcement treatment is dipped in a manganous nitrate solution; (2) the tantalum block dipped with the manganous nitrate solution is placed in a metal box, and the tantalum block together with the metal box is placed in a manganese dioxide layer forming oven to be subjected to thermal decomposition; (3) the step (1) and the step (2) are repeated one to two times; (4) after the previous steps are completed, the tantalum block is dipped in the manganous nitrate solution; (5) the step (2) is repeated; (6) the step (4) and the step (5) are repeated one to two times; (7) the tantalum block is placed in a forming solution and charged with electricity. The decomposition rate of Mn(NO3)2 is controlled through the method, the quality of a formed manganese dioxide layer is guaranteed, and therefore the tantalum capacitor is stable in electrical performance parameter. The prepared manganese dioxide layer of the tantalum capacitor is uniform in density and compact, and equivalent series resistance is good in consistency and is reduced by more than 25% compared with that of an existing process.

Description

Technical field [0001] The invention belongs to the technical field of capacitor manufacturing, and specifically relates to a method for densifying a tantalum capacitor film. Background technique [0002] Tantalum capacitors are small in size and large in capacity, more than twice the capacitance of other capacitors of the same volume. They play an important role in the miniaturization and performance improvement of electronic products. They are widely used in computers, mobile communication networks, terminal equipment, and smart home appliances. , Internet of Things and other fields, due to the rapid development of electronic technology in the civil electronics industry, automotive electronics and high-tech aerospace industries, the demand for electrolytic capacitors has increased significantly, and at the same time, there are increasingly higher requirements for their reliability. [0003] The high reliability of tantalum capacitors requires tantalum capacitors to have excellent...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/032
Inventor 刘远元王安玖赵泽英贾新虎金源
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD