Unlock instant, AI-driven research and patent intelligence for your innovation.

Parallel line pattern containing conductive material, method for forming parallel line pattern, substrate with transparent conductive film, device, and electronic device

A conductive material, parallel line technology, applied in conductive pattern formation, semiconductor devices, electrical components, etc., can solve the problems of long cycle time, poor material use efficiency, high cost of ITO transparent electrodes, and achieve improved characteristics and stability. Effect

Active Publication Date: 2018-04-03
KONICA MINOLTA INC
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, methods such as vacuum evaporation and sputtering have problems such as long takt time and very poor material usage efficiency, and there is a big problem such as high cost of ITO transparent electrodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Parallel line pattern containing conductive material, method for forming parallel line pattern, substrate with transparent conductive film, device, and electronic device
  • Parallel line pattern containing conductive material, method for forming parallel line pattern, substrate with transparent conductive film, device, and electronic device
  • Parallel line pattern containing conductive material, method for forming parallel line pattern, substrate with transparent conductive film, device, and electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~7 and comparative example 1、2

Embodiment 8

Embodiment 9

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to View More

Abstract

The purpose of the present invention is to provide a parallel line pattern containing a conductive material and a parallel line pattern formation method capable of improving transparency of and resistance value stability for a fine conductor pattern. The parallel line pattern is characterized by having at least one or more sets of parallel lines (10) that contain a conductive material and are formed on a substrate (2), and each set of parallel lines (10) consists of parallel lines (10) formed by conductive material being separated by movement of a fluid. The parallel line pattern formation method is characterized in that when evaporating a fluid that is linearly applied onto the substrate (2) so as to form the parallel line pattern (1) having at least one or more sets of parallel lines (10) containing the conductive material, the convective state of the linear fluid is controlled such that the conductive material is selectively deposited at edges of the linear fluid.

Description

Parallel line pattern including conductive material, method for forming parallel line pattern, substrate with transparent conductive film, device, and electronic equipment technical field The invention relates to a parallel line pattern containing conductive material, a method for forming the parallel line pattern, a base material with a transparent conductive film, a device and an electronic device. Background technique In recent years, various types of display technologies, such as liquid crystal, plasma, organic electroluminescence, and field emission, have been developed along with increasing demand for thin TVs and the like. In any of the displays with different display methods, transparent electrodes are an essential structural technology. In addition to televisions, transparent electrodes are also indispensable technical elements in touch panels, mobile phones, electronic paper, various solar cells, and various electroluminescent dimming devices. Conventionally, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00H05K3/10
CPCG06F2203/04103H01L31/022466H01L31/1884H05K1/097H05K3/125H05K2203/0783
Inventor 大屋秀信牛久正幸山内正好新妻直人
Owner KONICA MINOLTA INC