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Transistor device

A transistor and body technology, applied in semiconductor devices, electric solid-state devices, semiconductor/solid-state device components, etc., can solve problems such as the overall efficiency of the device, the influence of the gain and the ease of manufacturing reliability, and achieve increased drain efficiency, The effect of reducing loss and increasing gain

Inactive Publication Date: 2017-11-14
AMPLEON NETHERLANDS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the form of the RF return current path can have a huge impact on the overall efficiency, gain and reliability of the device and ease of manufacture

Method used

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  • Transistor device
  • Transistor device
  • Transistor device

Examples

Experimental program
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Embodiment Construction

[0034] figure 1 A transistor structure 1 is shown, comprising lateral double diffused metal oxide semiconductor (LDMOS) transistors, eg, LDMOS transistors suitable for use as power amplifiers in cellular base stations. It will be appreciated that the transistor structure may contain different types of transistors and may have different uses. The transistor structure 1 comprises a source terminal 2 connected to a ground 3 provided by a conductive substrate. The gate terminal 4 of the transistor structure comprises a gate terminal bond pad from which a bond wire 5 extends to provide a connection to the gate terminal 4 . Bonding wires 5 are connected to further bonding pads 6 . The drain terminal 7 of the transistor structure comprises a drain terminal bond pad from which a bond wire 8 extends to provide a connection to the drain terminal 7 . Bonding wires 8 are connected to further bonding pads 9 . exist figure 1 The bonding wires 5, 8 in are represented as inductances.

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PUM

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Abstract

A transistor device comprising a conductive substrate; a semiconductor body comprising a transistor structure comprising a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receiving a bond wire; wherein the semiconductor body includes a radio frequency return current path for carrying return current associated with the bond wire, the radio frequency return current path comprising a metal strip disposed on the body, the metal strip configured to The bond pad extends under and connects to the source terminal of the transistor structure.

Description

technical field [0001] The present invention relates to transistor devices and transistor packages. The invention also relates to field effect transistor devices and packages, power amplifiers and, in particular, LDMOS power amplifiers. Furthermore, the invention relates to a cellular base station comprising said power amplifier. Background technique [0002] Power amplifier transistors are used in cellular base stations. The overall efficiency of the transistor is important. Conventional power transistors include radio-frequency lateral double-diffused metal-oxide-semiconductor (LDMOS) transistors. [0003] In known discrete RF LDMOS power amplifier transistors, the transistor structure includes a source, drain and gate, the transistor structure being located on a silicon die contained within the package. The package also contains a matching network consisting of bond wires and isolated capacitors. Bond wires may also be connected to or from the transistor structure. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/41H01L29/78
CPCH01L23/66H01L29/41H01L29/78H01L2223/6611H01L2223/6655H01L2224/49H01L2224/4813H01L2924/13091H01L2924/181H01L2924/00H01L2224/45015H01L2924/00014H01L24/48H01L2224/45099H01L2924/20753H01L2224/05599H01L25/16H01L23/5223H01L24/09H01L24/49H01L2924/1205H01L2224/04042H01L2224/48101H01L2224/48195H01L2224/48157H01L29/7817
Inventor 彼德拉·C·A·哈梅斯约瑟夫斯·H·B·范德赞登罗伯·马蒂兹·赫里斯阿尔贝特·G·W·P·范佐耶伦
Owner AMPLEON NETHERLANDS